CS75N45 Datasheet. Equivalente

 ..1. Size:666K  cass
 cs75n45.pdf

CS75N45 N-Channel Trench Power MOSFET General Description The CS75N45 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM. DS(ON) Features VDS=75V; ID=139A@ VGS=10V; RDS(ON)

 9.1. Size:843K  crhj
 cs75n75 b8h.pdf

Silicon N-Channel Power MOSFET R CS75N75 B8H General Description VDSS 75 V CS75N75 B8H, the silicon N-channel Enhanced ID 100 A PD(TC=25 ) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 10.2 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 9.2. Size:63K  china
 cs75n75.pdf

CS75N75 N PD TC=25 220 W 1.4 W/ ID VGS=10V,TC=25 75 A ID VGS=10V,TC=100 56 A IDM 300 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.8 /W BVDSS VGS=0V,ID=0.25mA 75 V RDS on VGS=10V,ID=48A 0.0125 0.015

 9.3. Size:216K  foshan
 cs75n08.pdf

BR75N08(CS75N08) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25

 9.4. Size:843K  wuxi china
 cs75n75b8h.pdf

Silicon N-Channel Power MOSFET R CS75N75 B8H General Description VDSS 75 V CS75N75 B8H, the silicon N-channel Enhanced ID 100 A PD(TC=25 ) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 10.2 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po