DMP2022LSS Todos los transistores

 

DMP2022LSS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMP2022LSS

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.5 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1.1 V

Carga de compuerta (Qg): 56.9 nC

Conductancia de drenaje-sustrato (Cd): 2444 pF

Resistencia drenaje-fuente RDS(on): 0.016 Ohm

Empaquetado / Estuche: SO8

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DMP2022LSS Datasheet (PDF)

1.1. dmp2022lss.pdf Size:121K _diodes

DMP2022LSS
DMP2022LSS

DMP2022LSS SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 13m? @ VGS = -10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 16m? @ VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020 22m? @ VGS = -2.5V Terminals Connections: See Diagram Low Gate Threshold Vol

4.1. dmp2023ufdf.pdf Size:379K _update-mosfet

DMP2022LSS
DMP2022LSS

DMP2023UFDF 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features  0.6mm Profile – Ideal for Low Profile Applications ID max V(BR)DSS RDS(ON) max  PCB Footprint of 4mm2 TA = +25°C  Low Gate Threshold Voltage 27mΩ @ VGS = -4.5V -7.6A  Fast Switching Speed 32mΩ @ VGS = -2.5V -6.7A  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -20V

4.2. dmp2021ufdf.pdf Size:288K _update-mosfet

DMP2022LSS
DMP2022LSS

DMP2021UFDF P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • 0.6mm Profile – Ideal for Low Profile Applications ID max V(BR)DSS RDS(ON) max • PCB Footprint of 4mm2 TA = +25°C 16mΩ @ VGS = -4.5V -9.0A • Low Gate Threshold Voltage -20V -7.7A 22mΩ @ VGS = -2.5V • Low On-Resistance • ESD protected Gate • Totally Lead-Free & Full

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