DMP2069UFY4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMP2069UFY4
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.53 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 2.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 VQgⓘ - Carga de la puerta: 9.1 nC
Cossⓘ - Capacitancia de salida: 214 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.054 Ohm
Paquete / Cubierta: X2DFN20153
Búsqueda de reemplazo de MOSFET DMP2069UFY4
DMP2069UFY4 Datasheet (PDF)
dmp2069ufy4.pdf
DMP2069UFY4P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: DFN2015H4-3 54m @ VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 69m @ VGS = -2.5V Moisture Sensitivity: Level 1 per J-STD-020 90m @ VGS = -1.8V Terminals: Finish Matte Ti
dmp2060ufdb.pdf
DMP2060UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C 90m @ VGS = -4.5V -3.2A Low Profile, 0.6mm Max Height -20V 137m @ VGS = -2.5V -2.6A ESD protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
dmp2066lvt.pdf
DMP2066LVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25C Low Gate Threshold Voltage Low Input Capacitance 45m @ VGS = -4.5V -4.5A -20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 65m @ VGS = -2.5V -3.8A Halogen and Antimony Free. Green Device (Note
dmp2066lsd.pdf
DMP2066LSDDUAL P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Dual P-Channel MOSFET Case: SOP-8L Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 40m @ VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020D
dmp2066ufde.pdf
DMP2066UFDE20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm profile ideal for low profile applications ID V(BR)DSS RDS(ON) Package PCB footprint of 4mm2 TA = +25C Low Gate Threshold Voltage 36m @ VGS = -4.5V -6.2A Low On-Resistance U-DFN2020-6 -20V 56m @ VGS = -2.5V -5.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 &
dmp2066ldm.pdf
DMP2066LDMP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low RDS(ON): Case: SOT-26 Case Material Molded Plastic. UL Flammability Rating 94V-0 40 m @VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020D 70 m @VGS = -2.5V Terminals: Finish - Matte Tin Solderable per MIL
dmp2066lss.pdf
DMP2066LSSSINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: SOP-8L 40m @ VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 70m @ VGS = -2.5V Moisture Sensitivity: Level 1 per J-STD-02
dmp2066lsn.pdf
DMP2066LSNP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low RDS(ON): Case: SC-59 Case Material Molded Plastic. UL Flammability Rating 94V-0 40 m @VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020D 70 m @VGS = -2.5V Terminals: Finish - Matte Tin Solderable per MIL-
dmp2066lsn.pdf
Product specificationDMP2066LSNP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low RDS(ON): Case: SC-59 Case Material Molded Plastic. UL Flammability Rating 94V-0 40 m @VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020D 70 m @VGS = -2.5V Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Low Input/Output Leakage
dmp2066ldm.pdf
SMD Type MOSFETP-Channel MOSFETDMP2066LDM( )SOT-23-6 Unit:mm0.4+0.1-0.16 5 4 Features VDS (V) =-20V ID =-4.6 A1 2 3 RDS(ON) 40m (VGS =-4.5V)+0.020.15 -0.02+0.01-0.01 RDS(ON) 70m (VGS =-2.5V)+0.2-0.1 Low Input/Output LeakageD D SD D G Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sourc
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918