DMP2104V Todos los transistores

 

DMP2104V MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMP2104V

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.2 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 0.95 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1 V

Conductancia de drenaje-sustrato (Cd): 320 pF

Resistencia drenaje-fuente RDS(on): 0.15 Ohm

Empaquetado / Estuche: SOT563

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DMP2104V Datasheet (PDF)

1.1. dmp2104v.pdf Size:178K _diodes

DMP2104V
DMP2104V

DMP2104V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data P-Channel MOSFET Case: SOT-563 Very Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminals Connections: See Diag

3.1. dmp2104lp.pdf Size:317K _diodes

DMP2104V
DMP2104V

DMP2104LP P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data P-Channel MOSFET Case: DFN1411-3 Very Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance Terminal Connections: See

 4.1. dmp2100u.pdf Size:193K _update-mosfet

DMP2104V
DMP2104V

DMP2100U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID  Low On-Resistance V(BR)DSS RDS(ON) MAX Package TA = +25°C  Low Input Capacitance 38mΩ @ VGS = -10V -4.3A  Fast Switching Speed -20V 43mΩ @ VGS = -4.5V SOT23 -4.0A  Low Input/Output Leakage 75mΩ @ VGS = -2.5V -2.8A  ESD Protected Up To 3kV  Totally Lead-Free & Fully RoHS Compl

4.2. dmp2100ucb9.pdf Size:422K _update-mosfet

DMP2104V
DMP2104V

DMP2100UCB9 DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25°C) Features and Benefits  LD-MOS Technology with the Lowest Figure of Merit: VDSS RDS(on) Qg Qgd ID RDS(on) = 80mΩ to Minimize On-State Losses -20V 80mΩ 3.3nC 0.6nC -4A Qg = 3.3nC for Ultra-Fast Switching  Vgs(th) = -0.7V typ. for a Low Turn-On Potential  CSP with Footpr

 4.3. dmp210dudj.pdf Size:440K _diodes

DMP2104V
DMP2104V

DMP210DUDJ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual P-Channel MOSFET Case: SOT-963 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 o 5.0? @ -4.5V o 7.0? @ -2.5V Moisture Sensitivity: Level 1 per J-STD-020 o 10? @ -1.8V Terminal Connections: See Diagram o 15? @ -1.5V Ter

Otros transistores... DMP2035U , DMP2035UTS , DMP2066LDM , DMP2066LSD , DMP2066LSN , DMP2066LSS , DMP2069UFY4 , DMP2104LP , IRF3710 , DMP210DUDJ , DMP210DUFB4 , DMP2123L , DMP2130L , DMP2130LDM , DMP2160U , DMP2160UFDB , DMP2160UW .

 

 
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