DMP210DUDJ Todos los transistores

 

DMP210DUDJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMP210DUDJ

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.33 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.14 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 13.72 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm

Encapsulados: SOT963

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DMP210DUDJ datasheet

 ..1. Size:440K  diodes
 dmp210dudj.pdf pdf_icon

DMP210DUDJ

DMP210DUDJ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual P-Channel MOSFET Case SOT-963 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 o 5.0 @ -4.5V o 7.0 @ -2.5V Moisture Sensitivity Level 1 per J-STD-020 o 10 @ -1.8V Terminal Connections See Diagra

 6.1. Size:400K  diodes
 dmp210dufb4.pdf pdf_icon

DMP210DUDJ

DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID P-Channel MOSFET V(BR)DSS RDS(ON) TA = +25 C Low On-Resistance 5 @ VGS = -4.5V -200mA Very Low Gate Threshold Voltage VGS(TH) -170mA 7 @ VGS = -2.5V Low Input Capacitance -20V 10 @ VGS = -1.8V -140mA Fast Switching Speed -50mA 15 @ VGS = -1.5V

 8.1. Size:193K  diodes
 dmp2100u.pdf pdf_icon

DMP210DUDJ

DMP2100U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(ON) MAX Package TA = +25 C Low Input Capacitance 38m @ VGS = -10V -4.3A Fast Switching Speed -20V 43m @ VGS = -4.5V SOT23 -4.0A Low Input/Output Leakage 75m @ VGS = -2.5V -2.8A ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS Compl

 8.2. Size:422K  diodes
 dmp2100ucb9.pdf pdf_icon

DMP210DUDJ

DMP2100UCB9 DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25 C) Features and Benefits LD-MOS Technology with the Lowest Figure of Merit VDSS RDS(on) Qg Qgd ID RDS(on) = 80m to Minimize On-State Losses -20V 80m 3.3nC 0.6nC -4A Qg = 3.3nC for Ultra-Fast Switching Vgs(th) = -0.7V typ. for a Low Turn-On Potential CSP with Footpr

MOSTRAR MÁS

Otros transistores... DMP2035UTS , DMP2066LDM , DMP2066LSD , DMP2066LSN , DMP2066LSS , DMP2069UFY4 , DMP2104LP , DMP2104V , AO3400 , DMP210DUFB4 , DMP2123L , DMP2130L , DMP2130LDM , DMP2160U , DMP2160UFDB , DMP2160UW , DMP21D0UFB .

 

 

 


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