DMP2123L Todos los transistores

 

DMP2123L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMP2123L

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.4 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1.25 V

Conductancia de drenaje-sustrato (Cd): 443 pF

Resistencia drenaje-fuente RDS(on): 0.072 Ohm

Empaquetado / Estuche: SOT23

Búsqueda de reemplazo de MOSFET DMP2123L

 

DMP2123L Datasheet (PDF)

1.1. dmp2123l.pdf Size:163K _diodes

DMP2123L
DMP2123L

DMP2123L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • Low RDS(ON): • Case: SOT-23 • Case Material - Molded Plastic, “Green” Molding Compound. • 72 mΩ @VGS = -4.5V UL Flammability Rating 94V-0 • 108 mΩ @VGS = -2.7V • Moisture Sensitivity: Level 1 per J-STD-020D • 12

1.2. dmp2123l.pdf Size:131K _tysemi

DMP2123L
DMP2123L

Product specification DMP2123L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • Low RDS(ON): • Case: SOT-23 • Case Material - Molded Plastic, “Green” Molding Compound. • 72 mΩ @VGS = -4.5V UL Flammability Rating 94V-0 • 108 mΩ @VGS = -2.7V • Moisture Sensitivity: Level 1 per J-STD-020D • 123 mΩ @VGS = -2.5V • Terminals: Fin

 5.1. dmp21d0ufd.pdf Size:230K _update-mosfet

DMP2123L
DMP2123L

A Product Line of Diodes Incorporated DMP21D0UFD 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Low Gate Threshold Voltage ID max • Fast Switching Speed V(BR)DSS RDS(on) Max TA = 25°C (Notes 4) • ESD Protected Gate 3KV 495mΩ @ VGS = -4.5V -1.14A • Totally Lead-Free & Fully RoHS compliant (Note 1) • Halogen and Antimony Free. “G

5.2. dmp2100u.pdf Size:193K _update-mosfet

DMP2123L
DMP2123L

DMP2100U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID  Low On-Resistance V(BR)DSS RDS(ON) MAX Package TA = +25°C  Low Input Capacitance 38mΩ @ VGS = -10V -4.3A  Fast Switching Speed -20V 43mΩ @ VGS = -4.5V SOT23 -4.0A  Low Input/Output Leakage 75mΩ @ VGS = -2.5V -2.8A  ESD Protected Up To 3kV  Totally Lead-Free & Fully RoHS Compl

 5.3. dmp21d0ut.pdf Size:164K _update-mosfet

DMP2123L
DMP2123L

A Product Line of Diodes Incorporated DMP21D0UT 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Footprint of just 3mm2 – less than half the size of SOT23 ID Max • 0.8mm profile – ideal for low profile applications V(BR)DSS RDS(on) Max @ TA = 25°C • Low Gate Threshold Voltage (Note 4) • Fast Switching Speed • ESD Protected Gate

5.4. dmp21d5ufd.pdf Size:185K _update-mosfet

DMP2123L
DMP2123L

DMP21D5UFD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features • Low On-Resistance ID V(BR)DSS RDS(ON) max Package • Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = +25°C • Low Input Capacitance 1.0Ω @ VGS = -4.5V -600mA • Fast Switching Speed 1.5Ω @ VGS = -2.5V -500mA • ESD Protected Gate -20V X1-DFN1212-3 2.0Ω @ VGS = -1.8V -400mA • Tot

 5.5. dmp213dufa.pdf Size:270K _update-mosfet

DMP2123L
DMP2123L

DMP213DUFA 25V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features • 0.4mm Ultra Low Profile Package for Thin Application ID V(BR)DSS RDS(ON) • 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 TA = +25°C 10Ω @ VGS = -4.5V -166mA • Low VGS(th), Can be Driven Directly From a Battery -25V 13Ω @ VGS = -2.7V -138mA • Low RDS(on) • ESD Protected Gate

5.6. dmp21d5ufb4.pdf Size:244K _update-mosfet

DMP2123L
DMP2123L

DMP21D5UFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Low On-Resistance ID V(BR)DSS RDS(on) max • Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = 25°C • Low Input Capacitance • Fast Switching Speed 1.0Ω @ VGS = -4.5V -700mA • Ultra-Small Surfaced Mount Package 1.5Ω @ VGS = -2.5V -600mA • Ultra-low package profile, 0.4

5.7. dmp21d2ufa.pdf Size:342K _update-mosfet

DMP2123L
DMP2123L

DMP21D2UFA 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits  Low Package Profile, 0.4mm Maximum Package Height ID max V(BR)DSS RDS(ON) max  0.48mm2 Package Footprint, 16 Times Smaller than SOT23 TA = +25°C 1.0Ω @ VGS = -4.5V  Low On-Resistance 1.2Ω @ VGS = -2.5V  Very Low Gate Threshold Voltage, 1.0V max -20V -330mA 1.6Ω @ VG

5.8. dmp2100ucb9.pdf Size:422K _update-mosfet

DMP2123L
DMP2123L

DMP2100UCB9 DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25°C) Features and Benefits  LD-MOS Technology with the Lowest Figure of Merit: VDSS RDS(on) Qg Qgd ID RDS(on) = 80mΩ to Minimize On-State Losses -20V 80mΩ 3.3nC 0.6nC -4A Qg = 3.3nC for Ultra-Fast Switching  Vgs(th) = -0.7V typ. for a Low Turn-On Potential  CSP with Footpr

5.9. dmp2160ufdbq.pdf Size:332K _update-mosfet

DMP2123L
DMP2123L

DMP2160UFDBQ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features  Low On-Resistance ID MAX V(BR)DSS RDS(ON) max TA = +25°C  Low Gate Threshold Voltage, -0.9V Max -3.8A 70mΩ @ VGS = -4.5V  Fast Switching Speed -20V 85mΩ @ VGS = -2.5V -3.3A  Low Input/Output Leakage  Low Profile, 0.5mm Max Height  Totally Lead-Free & Fully RoHS Compli

5.10. dmp21d0ufd.pdf Size:230K _diodes

DMP2123L
DMP2123L

A Product Line of Diodes Incorporated DMP21D0UFD 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Low Gate Threshold Voltage ID max • Fast Switching Speed V(BR)DSS RDS(on) Max TA = 25°C (Notes 4) • ESD Protected Gate 3KV 495mΩ @ VGS = -4.5V -1.14A • Totally Lead-Free & Fully RoHS compliant (Note 1) • Halogen and Antimony Free. “G

5.11. dmp2160ufdb.pdf Size:143K _diodes

DMP2123L
DMP2123L

DMP2160UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • Low On-Resistance • Case: DFN2020B-6 • 70mΩ @VGS = -4.5V • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • 85mΩ @VGS = -2.5V • Moisture Sensitivity: Level 1 per J-STD-020

5.12. dmp2100u.pdf Size:193K _diodes

DMP2123L
DMP2123L

DMP2100U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID  Low On-Resistance V(BR)DSS RDS(ON) MAX Package TA = +25°C  Low Input Capacitance 38mΩ @ VGS = -10V -4.3A  Fast Switching Speed -20V 43mΩ @ VGS = -4.5V SOT23 -4.0A  Low Input/Output Leakage 75mΩ @ VGS = -2.5V -2.8A  ESD Protected Up To 3kV  Totally Lead-Free & Fully RoHS Compl

5.13. dmp2130ldm.pdf Size:162K _diodes

DMP2123L
DMP2123L

DMP2130LDM P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • Low RDS(ON): • Case: SOT-26 • Case Material – Molded Plastic. UL Flammability Rating 94V-0 • 80 mΩ @VGS = -4.5V • Moisture Sensitivity: Level 1 per J-STD-020D • 110 mΩ @VGS = -2.7V • Terminals: Finish - Matte Tin

5.14. dmp21d0ut.pdf Size:164K _diodes

DMP2123L
DMP2123L

A Product Line of Diodes Incorporated DMP21D0UT 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Footprint of just 3mm2 – less than half the size of SOT23 ID Max • 0.8mm profile – ideal for low profile applications V(BR)DSS RDS(on) Max @ TA = 25°C • Low Gate Threshold Voltage (Note 4) • Fast Switching Speed • ESD Protected Gate

5.15. dmp2130l.pdf Size:160K _diodes

DMP2123L
DMP2123L

DMP2130L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • Low RDS(ON): • Case: SOT-23 • Case Material - Molded Plastic, “Green” Molding Compound. • 75 mΩ @VGS = -4.5V UL Flammability Rating 94V-0 • 110 mΩ @VGS = -2.7V • Moisture Sensitivity: Level 1 per J-STD-020D • 12

5.16. dmp210dudj.pdf Size:440K _diodes

DMP2123L
DMP2123L

DMP210DUDJ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Dual P-Channel MOSFET • Case: SOT-963 • Low On-Resistance • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 o 5.0Ω @ -4.5V o 7.0Ω @ -2.5V • Moisture Sensitivity: Level 1 per J-STD-020 o 10Ω @ -1.8V • Terminal Connections: See Diagra

5.17. dmp2104v.pdf Size:178K _diodes

DMP2123L
DMP2123L

DMP2104V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • P-Channel MOSFET • Case: SOT-563 • Very Low On-Resistance • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Very Low Gate Threshold Voltage • Moisture Sensitivity: Level 1 per J-STD-020 • Low Input Capacitance • Terminal

5.18. dmp2104lp.pdf Size:317K _diodes

DMP2123L
DMP2123L

DMP2104LP P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • P-Channel MOSFET • Case: DFN1411-3 • Very Low On-Resistance • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Very Low Gate Threshold Voltage • Moisture Sensitivity: Level 1 per J-STD-020C • Low Input Capacitance • Te

5.19. dmp21d5ufd.pdf Size:185K _diodes

DMP2123L
DMP2123L

DMP21D5UFD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features • Low On-Resistance ID V(BR)DSS RDS(ON) max Package • Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = +25°C • Low Input Capacitance 1.0Ω @ VGS = -4.5V -600mA • Fast Switching Speed 1.5Ω @ VGS = -2.5V -500mA • ESD Protected Gate -20V X1-DFN1212-3 2.0Ω @ VGS = -1.8V -400mA • Tot

5.20. dmp2160u.pdf Size:128K _diodes

DMP2123L
DMP2123L

DMP2160U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Low On-Resistance ID max V(BR)DSS RDS(ON) max • 80 mΩ @ VGS = -4.5V TA = 25°C • 100 mΩ @ VGS = -2.5V 80mΩ @ VGS = -4.5V -3.2A • 140 mΩ @ VGS = -1.8V -20V • Very Low Gate Threshold Voltage VGS(th) ≤ 1V 140mΩ @ VGS = -1.8V -2.4A • Low Input Capacitance • Fast Swit

5.21. dmp2160uw.pdf Size:126K _diodes

DMP2123L
DMP2123L

DMP2160UW P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • Low On-Resistance • Case: SOT-323 • 100 mΩ @ VGS = -4.5V • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • 120 mΩ @ VGS = -2.5V • Moisture Sensitivity: Level 1 per J-STD-020D

5.22. dmp213dufa.pdf Size:270K _diodes

DMP2123L
DMP2123L

DMP213DUFA 25V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features • 0.4mm Ultra Low Profile Package for Thin Application ID V(BR)DSS RDS(ON) • 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 TA = +25°C 10Ω @ VGS = -4.5V -166mA • Low VGS(th), Can be Driven Directly From a Battery -25V 13Ω @ VGS = -2.7V -138mA • Low RDS(on) • ESD Protected Gate

5.23. dmp21d5ufb4.pdf Size:244K _diodes

DMP2123L
DMP2123L

DMP21D5UFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Low On-Resistance ID V(BR)DSS RDS(on) max • Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = 25°C • Low Input Capacitance • Fast Switching Speed 1.0Ω @ VGS = -4.5V -700mA • Ultra-Small Surfaced Mount Package 1.5Ω @ VGS = -2.5V -600mA • Ultra-low package profile, 0.4

5.24. dmp21d2ufa.pdf Size:342K _diodes

DMP2123L
DMP2123L

DMP21D2UFA 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits  Low Package Profile, 0.4mm Maximum Package Height ID max V(BR)DSS RDS(ON) max  0.48mm2 Package Footprint, 16 Times Smaller than SOT23 TA = +25°C 1.0Ω @ VGS = -4.5V  Low On-Resistance 1.2Ω @ VGS = -2.5V  Very Low Gate Threshold Voltage, 1.0V max -20V -330mA 1.6Ω @ VG

5.25. dmp2100ucb9.pdf Size:422K _diodes

DMP2123L
DMP2123L

DMP2100UCB9 DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25°C) Features and Benefits  LD-MOS Technology with the Lowest Figure of Merit: VDSS RDS(on) Qg Qgd ID RDS(on) = 80mΩ to Minimize On-State Losses -20V 80mΩ 3.3nC 0.6nC -4A Qg = 3.3nC for Ultra-Fast Switching  Vgs(th) = -0.7V typ. for a Low Turn-On Potential  CSP with Footpr

5.26. dmp2160ufdbq.pdf Size:332K _diodes

DMP2123L
DMP2123L

DMP2160UFDBQ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features  Low On-Resistance ID MAX V(BR)DSS RDS(ON) max TA = +25°C  Low Gate Threshold Voltage, -0.9V Max -3.8A 70mΩ @ VGS = -4.5V  Fast Switching Speed -20V 85mΩ @ VGS = -2.5V -3.3A  Low Input/Output Leakage  Low Profile, 0.5mm Max Height  Totally Lead-Free & Fully RoHS Compli

5.27. dmp2130l.pdf Size:74K _tysemi

DMP2123L
DMP2123L

Product specification DMP2130L P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low RDS(ON): • Case: SOT23 • Case Material - Molded Plastic, “Green” Molding Compound. • 75 mΩ @VGS = -4.5V UL Flammability Rating 94V-0 • 110 mΩ @VGS = -2.7V • Moisture Sensitivity: Level 1 per J-STD-020 • 125 mΩ @VGS = -2.5V • Terminals: Finish - Matte Tin anne

5.28. dmp2160uw.pdf Size:185K _tysemi

DMP2123L
DMP2123L

Product specification DMP2160UW P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data  Low On-Resistance  Case: SOT323  100m @ VGS = -4.5V  Case Material: Molded Plastic, “Green” Molding Compound.  120m @ VGS = -2.5V UL Flammability Classification Rating 94V-0  160m @ VGS = -1.8V  Moisture Sensitivity: Level 1 per J-STD-020D  Very Low Gate

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