DMP2160U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMP2160U
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.4 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 3.2 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 0.9 V
Carga de la puerta (Qg): 6.5 nC
Conductancia de drenaje-sustrato (Cd): 627 pF
Resistencia entre drenaje y fuente RDS(on): 0.08 Ohm
Paquete / Cubierta: SOT23
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DMP2160U Datasheet (PDF)
dmp2160u.pdf
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DMP2160UP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max 80 m @ VGS = -4.5V TA = 25C 100 m @ VGS = -2.5V 80m @ VGS = -4.5V -3.2A 140 m @ VGS = -1.8V -20V Very Low Gate Threshold Voltage VGS(th) 1V 140m @ VGS = -1.8V -2.4A Low Input Capacitance Fast Swit
dmp2160ufdb.pdf
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DMP2160UFDBDUAL P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: DFN2020B-6 70m @VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 85m @VGS = -2.5V Moisture Sensitivity: Level 1 per J-STD-020
dmp2160ufdbq.pdf
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DMP2160UFDBQ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) max TA = +25C Low Gate Threshold Voltage, -0.9V Max -3.8A 70m @ VGS = -4.5V Fast Switching Speed -20V 85m @ VGS = -2.5V -3.3A Low Input/Output Leakage Low Profile, 0.5mm Max Height Totally Lead-Free & Fully RoHS Compli
dmp2160uw.pdf
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DMP2160UWP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-323 100 m @ VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 120 m @ VGS = -2.5V Moisture Sensitivity: Level 1 per J-STD-020D
dmp2160uw.pdf
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Product specification DMP2160UWP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT323 100m @ VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. 120m @ VGS = -2.5V UL Flammability Classification Rating 94V-0 160m @ VGS = -1.8V Moisture Sensitivity: Level 1 per J-STD-020D Very Low Gate
tpdmp2160uw.pdf
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TPDMP21 6 0UWP-Channel Enhancement-Mode MOS FETswww.sot23.com.twFeaturesApplications (typ) @VGS =4.5V. -20V, -2.3A, RDS(ON) =100m Battery protection RDS(ON) = 125m (typ) @VGS = 2.5V. Load switch Power management SOT-323 package. Ordering InformationPart Number Qty per Reel Reel SizeTPDMP2160UW 3000 7DSGSOT-323Absolute Maximum Ratings (TA=25C
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