DMP2160UW Todos los transistores

 ..1. Size:126K  diodes
 dmp2160uw.pdf

 ..2. Size:185K  tysemi
 dmp2160uw.pdf

Product specification DMP2160UW P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT323 100m @ VGS = -4.5V Case Material Molded Plastic, Green Molding Compound. 120m @ VGS = -2.5V UL Flammability Classification Rating 94V-0 160m @ VGS = -1.8V Moisture Sensitivity Level 1 per J-STD-020D Very Low Gate

 0.1. Size:2500K  cn tech public
 tpdmp2160uw.pdf

TPDMP21 6 0UW P-Channel Enhancement-Mode MOS FETs www.sot23.com.tw Features Applications (typ) @VGS =4.5V. -20V, -2.3A, RDS(ON) =100m Battery protection RDS(ON) = 125m (typ) @VGS = 2.5V. Load switch Power management SOT-323 package. Ordering Information Part Number Qty per Reel Reel Size TPDMP2160UW 3000 7 D S G SOT-323 Absolute Maximum Ratings (TA=25 C

 6.1. Size:143K  diodes
 dmp2160ufdb.pdf

DMP2160UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case DFN2020B-6 70m @VGS = -4.5V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 85m @VGS = -2.5V Moisture Sensitivity Level 1 per J-STD-020

 6.2. Size:128K  diodes
 dmp2160u.pdf

DMP2160U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max 80 m @ VGS = -4.5V TA = 25 C 100 m @ VGS = -2.5V 80m @ VGS = -4.5V -3.2A 140 m @ VGS = -1.8V -20V Very Low Gate Threshold Voltage VGS(th) 1V 140m @ VGS = -1.8V -2.4A Low Input Capacitance Fast Swit

 6.3. Size:332K  diodes
 dmp2160ufdbq.pdf

DMP2160UFDBQ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) max TA = +25 C Low Gate Threshold Voltage, -0.9V Max -3.8A 70m @ VGS = -4.5V Fast Switching Speed -20V 85m @ VGS = -2.5V -3.3A Low Input/Output Leakage Low Profile, 0.5mm Max Height Totally Lead-Free & Fully RoHS Compli