DMP3020LSS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMP3020LSS
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 30.7 nC
   Cossⓘ - Capacitancia de salida: 1802 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET DMP3020LSS

DMP3020LSS Datasheet (PDF)

..1. Size:197K diodes
dmp3020lss.pdf

DMP3020LSSSINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOP-8L 14m @ VGS = -10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 25m @ VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020D

8.1. Size:416K diodes
dmp3028lk3.pdf

DMP3028LK3 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 100% Unclamped Inductive Switch (UIS) Test In Production V(BR)DSS RDS(on) TC = +25C Low On-Resistance Fast Switching Speed 25m @ VGS = -10V -27A -30V Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) 38m @ VGS = -4.5V -22A Halogen and Antimony Free. Green Devi

8.2. Size:404K diodes
dmp3028lfde.pdf

DMP3028LFDE 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance V(BR)DSS RDS(on) max TA = +25C Low On-Resistance 25m @ VGS = -10V -6.8A -30V Fast Switching Speed -5.0A 38m @ VGS = -4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descripti

8.3. Size:234K diodes
dmp3028lsd.pdf

DMP3028LSD Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -30 V Gate-Source Voltage 20 V VGSS Steady TA = +25C -6 ID A State -4.7 TA = +70C Continuous Drain Current (Note 5) VGS = 10V TA = +25C -7.4 t

8.4. Size:840K cn vbsemi
dmp3025lk3-13.pdf

DMP3025LK3-13www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.033 at VGS = - 10 V - 26 100 % Rg TestedRoHS- 30 19 nCCOMPLIANT 100 % UIS Tested0.046 at VGS = - 4.5 V - 21APPLICATIONS Load Switch Notebook Adaptor SwitchSTO-252GG D SDTop View

8.5. Size:265K inchange semiconductor
dmp3028lk3.pdf

isc P-Channel MOSFET Transistor DMP3028LK3FEATURESDrain Current I = -27A@ T =25D CDrain Source Voltage-: V = -30V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

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