ZXM66P03N8 Todos los transistores

 

ZXM66P03N8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXM66P03N8

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.5 W

Tensión drenaje-fuente |Vds|: 30 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 7.9 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 62.5 nC

Conductancia de drenaje-sustrato (Cd): 1979 pF

Resistencia drenaje-fuente RDS(on): 0.035 Ohm

Empaquetado / Estuche: SO8

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ZXM66P03N8 Datasheet (PDF)

0.1. zxm66p03n8.pdf Size:65K _diodes

ZXM66P03N8
ZXM66P03N8

ZXM66P03N830V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications. SO8FEATURES Low on-resistanc

0.2. zxm66p03n8ta.pdf Size:64K _zetex

ZXM66P03N8
ZXM66P03N8

ZXM66P03N830V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications. SO8FEATURES Low on-resistanc

 7.1. zxm66p02n8tc zxm66p02n8 zxm66p02n8ta.pdf Size:610K _diodes

ZXM66P03N8
ZXM66P03N8

A Product Line ofDiodes IncorporatedZXM66P02N820V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits High pulse current handling in linear mode V(BR)DSS RDS(on) ID Low on-resistance Fast switching speed -20V 0.025 -8.0A Low gate drive Low profile SOIC package Descripti

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