ZXMP3F30FH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXMP3F30FH
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.4
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 3.4
A
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia
de salida: 370
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14
Ohm
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de MOSFET ZXMP3F30FH
Principales características: ZXMP3F30FH
..1. Size:210K tysemi
zxmp3f30fh zxmp3f30fhta.pdf 
Product specification ZXMP3F30FH 30V SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET Summary V(BR)DSS (V) RDS(on) ( ) ID (A) 0.080 @ VGS= -10V -4.0 -30 0.140 @ VGS= -4.5V Description This new generation Trench MOSFET from TY has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance. Features Low on-resistance Fast swi
..2. Size:1473K cn vbsemi
zxmp3f30fh.pdf 
ZXMP3F30FH www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-
7.1. Size:244K diodes
zxmp3f35n8.pdf 
ZXMP3F35N8 30V SO8 P-channel enhancement mode MOSFET Summary V(BR)DSS (V) RDS(on) ( ) ID(A) -30 0.012 @ VGS=-10V -17.1 0.018 @ VGS=-4.5V Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance making it ideal for battery protection and reverse connection application
7.2. Size:247K diodes
zxmp3f36n8.pdf 
ZXMP3F36N8 30V SO8 P-channel enhancement mode MOSFET Summary V(BR)DSS (V) RDS(on) ( ) ID(A) -30 0.020 @ VGS=-10V -12.6 0.028 @ VGS=-4.5V Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance. Features Low on-resistance SO8 package Applications B
9.1. Size:574K diodes
zxmp3a16gta.pdf 
A Product Line of Diodes Incorporated ZXMP3A16G 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID max Fast switching speed V(BR)DSS RDS(on) max TA = 25 C Low threshold (Notes 3) Low gate drive 45m @ VGS = -10V -7.5A Green component. Lead Free Finish / RoHS compliant -30V (Note 1) 70m @ VGS
9.2. Size:164K diodes
zxmp3a17dn8.pdf 
ZXMP3A17DN8 DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.070 ; ID= -4.4A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistan
9.3. Size:154K diodes
zxmp3a16n8.pdf 
ZXMP3A16N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.040 ID = -6.7A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistance
9.4. Size:154K diodes
zxmp3a17e6.pdf 
ZXMP3A17E6 ADVANCE INFORMATION 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.07 ID = -4.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURE
9.5. Size:216K diodes
zxmp3a13f.pdf 
ZXMP3A13F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.21 ID = -1.6A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-resistance
9.6. Size:162K diodes
zxmp3a16g.pdf 
ZXMP3A16G 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V RDS(on) = 0.045 ID = -7.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES Low on-resista
9.7. Size:156K diodes
zxmp3a16dn8.pdf 
ZXMP3A16DN8 DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.045 ; ID= -5.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistan
9.9. Size:144K zetex
zxmp3a16n8ta.pdf 
ZXMP3A16N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.040 ID = -6.7A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistance
9.10. Size:152K zetex
zxmp3a17e6ta.pdf 
ZXMP3A17E6 ADVANCE INFORMATION 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.07 ID = -4.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURE
9.11. Size:206K zetex
zxmp3a13fta.pdf 
ZXMP3A13F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.21 ID = -1.6A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-resistance
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