ZXMP3F37DN8 Todos los transistores

 

ZXMP3F37DN8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMP3F37DN8

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.8 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 8.3 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 31.6 nC

Conductancia de drenaje-sustrato (Cd): 1678 pF

Resistencia drenaje-fuente RDS(on): 0.041 Ohm

Empaquetado / Estuche: SO8

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ZXMP3F37DN8 Datasheet (PDF)

3.1. zxmp3f36n8.pdf Size:247K _diodes

ZXMP3F37DN8
ZXMP3F37DN8

ZXMP3F36N8 30V SO8 P-channel enhancement mode MOSFET Summary V(BR)DSS (V) RDS(on) (Ω) ID(A) -30 0.020 @ VGS=-10V -12.6 0.028 @ VGS=-4.5V Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance. Features • Low on-resistance • SO8 package Applications • B

3.2. zxmp3f35n8.pdf Size:244K _diodes

ZXMP3F37DN8
ZXMP3F37DN8

ZXMP3F35N8 30V SO8 P-channel enhancement mode MOSFET Summary V(BR)DSS (V) RDS(on) (Ω) ID(A) -30 0.012 @ VGS=-10V -17.1 0.018 @ VGS=-4.5V Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance making it ideal for battery protection and reverse connection application

 3.3. zxmp3f30fh zxmp3f30fhta.pdf Size:210K _tysemi

ZXMP3F37DN8
ZXMP3F37DN8

Product specification ZXMP3F30FH 30V SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET Summary V(BR)DSS (V) RDS(on) (Ω) ID (A) 0.080 @ VGS= -10V -4.0 -30 0.140 @ VGS= -4.5V Description This new generation Trench MOSFET from TY has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance. Features • Low on-resistance • Fast swi

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