ZXMP3F37DN8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ZXMP3F37DN8
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.3 A

CARACTERÍSTICAS ELÉCTRICAS

   Qgⓘ - Carga de la puerta: 31.6 nC
   Cossⓘ - Capacitancia de salida: 1678 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.041 Ohm
   Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET ZXMP3F37DN8

ZXMP3F37DN8 Datasheet (PDF)

7.1. Size:244K diodes
zxmp3f35n8.pdf

ZXMP3F35N8 30V SO8 P-channel enhancement mode MOSFET Summary V(BR)DSS (V) RDS(on) () ID(A) -30 0.012 @ VGS=-10V -17.10.018 @ VGS=-4.5VDescription This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance making it ideal for battery protection and reverse connection application

7.2. Size:247K diodes
zxmp3f36n8.pdf

ZXMP3F36N8 30V SO8 P-channel enhancement mode MOSFET Summary V(BR)DSS (V) RDS(on) () ID(A) -30 0.020 @ VGS=-10V -12.60.028 @ VGS=-4.5VDescription This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance. Features Low on-resistance SO8 package Applications B

7.3. Size:210K tysemi
zxmp3f30fh zxmp3f30fhta.pdf

Product specificationZXMP3F30FH 30V SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET Summary V(BR)DSS (V) RDS(on) () ID (A) 0.080 @ VGS= -10V -4.0-30 0.140 @ VGS= -4.5VDescription This new generation Trench MOSFET from TY has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance. Features Low on-resistance Fast swi

7.4. Size:1473K cn vbsemi
zxmp3f30fh.pdf

ZXMP3F30FHwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-

Otros transistores... ZXMP3A16DN8 , ZXMP3A16G , ZXMP3A16N8 , ZXMP3A17DN8 , ZXMP3A17E6 , ZXMP3F30FH , ZXMP3F35N8 , ZXMP3F36N8 , STP65NF06 , ZXMP3F37N8 , BSS84(Z) , BSS84DW , BSS84V , BSS84W , DMP4050SSD , DMP4050SSS , DMP4051LK3 .

Liste

Recientemente añadidas las descripciónes de los transistores: