BSS84(Z) Todos los transistores

 

BSS84(Z) MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSS84(Z)

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.36 W

Tensión drenaje-fuente |Vds|: 50 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 0.13 A

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 40 pF

Resistencia drenaje-fuente RDS(on): 10 Ohm

Empaquetado / Estuche: SOT23

Búsqueda de reemplazo de MOSFET BSS84(Z)

 

BSS84(Z) Datasheet (PDF)

9.1. bss84lt1rev0x.pdf Size:116K _motorola

BSS84(Z)
BSS84(Z)

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSS84LT1/DBSS84LT1Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single P-ChannelP CHANNELField Effect Tr

9.2. bss84rev0.pdf Size:139K _motorola

BSS84(Z)
BSS84(Z)

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSS84/DBSS84Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single P-ChannelP CHANNELField Effect Transist

 9.3. bss84.pdf Size:122K _motorola

BSS84(Z)
BSS84(Z)

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSS84/DBSS84Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single P-ChannelP CHANNELField Effect Transist

9.4. bss84lt1.pdf Size:120K _motorola

BSS84(Z)
BSS84(Z)

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSS84LT1/DBSS84LT1Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single P-ChannelP CHANNELField Effect Tr

 9.5. bss84 2.pdf Size:74K _philips

BSS84(Z)
BSS84(Z)

DISCRETE SEMICONDUCTORSDATA SHEETBSS84P-channel enhancement modevertical D-MOS transistor1997 Jun 18Product specificationSupersedes data of 1995 Apr 07File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationP-channel enhancement modeBSS84vertical D-MOS transistorFEATURES PINNING - SOT23 Low threshold voltagePIN SYMBOL DESCRIPTION

9.6. bss84.pdf Size:139K _fairchild_semi

BSS84(Z)
BSS84(Z)

July 2002 BSS84 P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode field effect -0.13A, -50V. RDS(ON) = 10 @ VGS = -5 V transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on- Voltage controlled p-chan

9.7. bss84akmb.pdf Size:1030K _nxp

BSS84(Z)
BSS84(Z)

BSS84AKMB50 V, single P-channel Trench MOSFETRev. 1 6 June 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ElectroStatic Di

9.8. bss84v.pdf Size:209K _diodes

BSS84(Z)
BSS84(Z)

BSS84VDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-563 Low Gate Threshold Voltage Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020C Fast Switching Speed Lead Free By

9.9. bss84.pdf Size:169K _diodes

BSS84(Z)
BSS84(Z)

BSS84P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-ResistanceV(BR)DSS RDS(on) max TA = +25C Low Gate Threshold Voltage -50V 10 @ VGS = -5V -130mA Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This MOSFET has been desi

9.10. bss84 2.pdf Size:101K _diodes

BSS84(Z)
BSS84(Z)

BSS84P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-23 Low Gate Threshold Voltage Case Material: UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Solderable per MIL-STD-202, Method 208 Low Input/Out

9.11. bss84w.pdf Size:139K _diodes

BSS84(Z)
BSS84(Z)

BSS84WP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-323 Low Gate Threshold Voltage Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020C Fast Switching Speed Terminal

9.12. bss84-7.pdf Size:90K _diodes

BSS84(Z)
BSS84(Z)

BSS84P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID Low Gate Threshold Voltage V(BR)DSS RDS(on) max TA = 25C Low Input Capacitance Fast Switching Speed -50V 10 @ VGS = -5V -130mA Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qua

9.13. bss84dw.pdf Size:194K _diodes

BSS84(Z)
BSS84(Z)

BSS84DWDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-363 Low Gate Threshold Voltage Case Material: Molded Plastic. Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020C Fast Switching Speed Termina

9.14. bss8402dw.pdf Size:173K _diodes

BSS84(Z)
BSS84(Z)

BSS8402DWCOMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-363 Low Gate Threshold Voltage Case Material: Molded Plastic. Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitiv

9.15. bss84p.pdf Size:97K _infineon

BSS84(Z)
BSS84(Z)

Preliminary dataBSS 84 PSIPMOS Small-Signal-TransistorFeaturesProduct Summary P-ChannelDrain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance RDS(on) 8 Avalanche ratedContinuous drain current ID -0.17 A Logic Level3 dv/dt rated21VPS05161Type Package Ordering Code Marking Pin 1 PIN 2 PIN 3BSS 84 P SOT-23 Q67041-S1417 YBs G S DMaxi

9.16. bss84p .pdf Size:702K _infineon

BSS84(Z)
BSS84(Z)

BSS 84 PSIPMOS Small-Signal-TransistorProduct SummaryFeatureVDS-60 V P-ChannelRDS(on) 8 Enhancement modeID -0.17 A Logic LevelPG-SOT-23 Avalanche rated3 dv/dt rated21VPS05161Tape and ReelType Package MarkingDrainBSS 84 P PG-SOT-23 L6327:3000pcs/r. YBspin 3GateBSS 84 P PG-SOT-23 L6433:10000pcs/r. YBspin1Sourcepin 2Maximum Ratings, at TA

9.17. bss84pw.pdf Size:120K _infineon

BSS84(Z)
BSS84(Z)

BSS84PWSIPMOS Small-Signal-TransistorFeaturesProduct Summary P-Channel Drain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance 8RDS(on) Avalanche rated Continuous drain current -0.15 AID Logic Level3 dv/dt rated2 Qualified according to AEC Q1011VSO05561 Halogen-free according to IEC61249-2-21Type Package Tape and Reel Marking

9.18. bss84lt1-d.pdf Size:67K _onsemi

BSS84(Z)
BSS84(Z)

BSS84LT1Power MOSFET130 mA, 50 VP-Channel SOT-23These miniature surface mount MOSFETs reduce power lossconserve energy, making this device ideal for use in small powerhttp://onsemi.commanagement circuitry. Typical applications are DC-DC converters,load switching, power management in portable and battery-poweredproducts such as computers, printers, cellular and cordless telepho

9.19. bvss84l sbss84lt1g.pdf Size:95K _onsemi

BSS84(Z)
BSS84(Z)

BSS84L, BVSS84LPower MOSFETSingle P-Channel SOT-23-50 V, 10 W SOT-23 Surface Mount Package Saves Board Spacehttp://onsemi.com AEC Q101 Qualified and PPAP Capable - BVSS84L These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted) -50 V 10 W @ 10 VRating Symbol Value UnitP-ChannelDrain-to-Source Voltag

9.20. bss84z.pdf Size:160K _utc

BSS84(Z)
BSS84(Z)

UNISONIC TECHNOLOGIES CO., LTD BSS84Z Preliminary Power MOSFET 0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION These P-Channel enhancement mode field vertical D-MOS transistors are in a SOT-23-3 SMD package, and in most applications they require up to 0.13A DC and can deliver current up to 0.52A. This product is particularly suited to low voltage

9.21. bss84.pdf Size:1316K _jiangsu

BSS84(Z)
BSS84(Z)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETsBSS84 P-CHANNEL MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 8@-10V3-50V-0.13A@10 -5V1DESCRIPTION 2These miniature surface mount MOSFETs reduce power loss conserve 1. GATE energy, making this device ideal for use in small power management circuitry. 2. SOURCE 3. DRAIN

9.22. bss84.pdf Size:297K _gsme

BSS84(Z)
BSS84(Z)

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.BSS84SOT-23 (SOT-23 Field Effect Transistors)P-Channel Enhancement-Mode MOS FETsP-Channel Enhancement-Mode MOS FETsP-Channel Enhancement-Mode MOS FETs

9.23. bss84.pdf Size:131K _wietron

BSS84(Z)
BSS84(Z)

BSS84Small Signal MOSFETP-Channel3 DRAINSOT-23Features:31*Low On-Resistance : 10 GATE1 *Low Input Capacitance: 30PF2*Low Out put Capacitance : 10PF 2SOURCE*Low Threshole : 2.0V*Fast Switching Speed : 2.5nsApplication:* DC to DC Converter* Cellular & PCMCIA Card* Cordless Telephone* Power Management in Portable and Battery etc.Maximum Ratings (TA=25 C

9.24. bss84w.pdf Size:793K _wietron

BSS84(Z)
BSS84(Z)

BSS84WP-Channel POWER MOSFETP b Lead(Pb)-Free312Description:* These miniature surface mount MOSFETs reduce power lossSOT-323(SC-70)conserve energy, making this device ideal for use in small powermanagement circuitry. Typical applications are dcdc converters, loadswitching, power management in portable and batterypowered3 DRAINproducts such as computers, printers,

9.25. bss84wt1.pdf Size:377K _willas

BSS84(Z)
BSS84(Z)

FM120-M WILLASTHRUBSS84WT1Power MOSFETmAmps, 50 VotsmAmps, 50 Vots130FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application

9.26. bss84lt1.pdf Size:381K _willas

BSS84(Z)
BSS84(Z)

FM120-M WILLASBSS84LT1THRU mAmps, 50 VotsPower MOSFET 130 BARRIER RECTIFIERS -20V- 200VFM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimi

9.27. bss84n3.pdf Size:301K _cystek

BSS84(Z)
BSS84(Z)

Spec. No. : C465N3 Issued Date : 2009.03.03 CYStech Electronics Corp.Revised Date : 2012.05.18 Page No. : 1/ 8 50V P-CHANNEL Enhancement Mode MOSFET BVDSS -50VBSS84N3 ID -130mARDSON@VGS=-5V, ID=-100mA 6(typ) Features Low gate charge Excellent thermal and electrical capabilities Pb-free package Equivalent Circuit Outline BSS84N3 SOT-23 D GGate

9.28. bss84s6r.pdf Size:299K _cystek

BSS84(Z)
BSS84(Z)

Spec. No. : C465S6R Issued Date : 2012.12.25 CYStech Electronics Corp.Revised Date : Page No. : 1/ 8 Dual P-Channel MOSFET BVDSS -50VBSS84S6R ID -170mARDSON@VGS=-10V, ID=-100mA 5 (typ)RDSON@VGS=-5V, ID=-100mA 6 (typ)Features RDSON@VGS=-3V, ID=-30mA 8 (typ) Low on-resistance High ESD capability High speed switching Low-voltage drive(-2.5V)

9.29. bss84ks3.pdf Size:305K _cystek

BSS84(Z)
BSS84(Z)

Spec. No. : C465S3 Issued Date : 2012.05.19 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/ 8 50V P-CHANNEL Enhancement Mode MOSFET BVDSS -50VBSS84KS3 ID -170mA 8 (MAX) RDSON@-10V 10 (MAX) RDSON@-5V 12 (MAX) RDSON@-4V Features 32 (MAX) RDSON@-2.5V Low gate charge Excellent thermal and electrical capabilities Pb-

9.30. lbss84wt1g s-lbss84wt1g.pdf Size:611K _lrc

BSS84(Z)
BSS84(Z)

LBSS84WT1GS-LBSS84WT1GPower MOSFET130 mA, 50V PChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.Energy efficient2. DEVICE MARKING AND OR

9.31. lbss8402dw1t1g s-lbss8402dw1t1g.pdf Size:635K _lrc

BSS84(Z)

9.32. lbss84lt1g s-lbss84lt1g.pdf Size:477K _lrc

BSS84(Z)
BSS84(Z)

LBSS84LT1GS-LBSS84LT1GPower MOSFET130 mA, 50V PChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.Energy efficient2. DEVICE MARKING AND O

9.33. lbss84elt1g s-lbss84elt1g.pdf Size:553K _lrc

BSS84(Z)
BSS84(Z)

LBSS84ELT1GS-LBSS84ELT1GPower MOSFET 60V PChannel1. FEATURESAdvanced trench cell design.High speed switch.G-S ESD Protected: 1000VPb-Free Package is available.We declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change re

9.34. lbss84dw1t1g s-lbss84dw1t1g.pdf Size:500K _lrc

BSS84(Z)
BSS84(Z)

LESHAN RADIO COMPANY, LTD.Power MOSFET mAmps, 50 Vots130PChannel SC88LBSS84DW1T1GS-LBSS84DW1T1GThese miniature surface mount MOSFETs reduce power lossconserve energy, making this device ideal for use in small powermanagement circuitry. Typical applications are dcdc converters, loadswitching, power management in portable and batterypoweredproducts such as compute

9.35. gsmbss84.pdf Size:375K _globaltech_semi

BSS84(Z)
BSS84(Z)

GSMBSS84 GSMBSS84 50V P-Channel Enhancement Mode MOSFET Product Description Features -50V/-0.1A,RDS(ON)=10@VGS=-5V GSMBSS84, P-Channel enhancement mode Super high density cell design for extremely MOSFET, uses Advanced Trench Technology to low RDS (ON) provide excellent RDS(ON), low gate charge. Exceptional on-resistance and maximum DCcurrent capability The

9.36. bss84ta bss84tc.pdf Size:41K _zetex

BSS84(Z)

SOT HA HA T SS8 OD TI A D OS TISS S T T I D T I SDA SO T A I ATI S T V ITD i V I VD V i D i ID I D i ID V I V V Di i i T T T i T T I A HA A T ISTI S a Ta T I T IT DITI D i VD V V V ID V I V 8 V VD V ID T I V I V I ID T D i T V V V V T V V V V I V V VD VD i D V V i ID VD VT ID I i i V V

9.37. bss84.pdf Size:1328K _anbon

BSS84(Z)
BSS84(Z)

P-Channel MOSFET BSS84SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE Load Switch for Portable Devices 3. DRAIN DC/DC Converter MARKING: SP or B 8 4MAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Max Unit Drain-So

9.38. bss84.pdf Size:1328K _fms

BSS84(Z)
BSS84(Z)

P-Channel MOSFET BSS84SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE Load Switch for Portable Devices 3. DRAIN DC/DC Converter MARKING: SP or B 8 4MAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Max Unit Drain-So

9.39. bss84.pdf Size:718K _huashuo

BSS84(Z)
BSS84(Z)

BSS84 P-Ch 60V Fast Switching MOSFETs Description Product Summary VDS -60 V The BSS84 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and RDS(ON),max 6 efficiency for most of the small power switching and load switch applications. ID -0.3 A The BSS84 meet the RoHS and Green Product requirement with full function reliability approved.

9.40. bss84.pdf Size:1665K _mdd

BSS84(Z)
BSS84(Z)

BSS84SOT-23 Plastic-Encapsulate MOSFETS-50V P-Channel MOSFETSOT-23 ID V(BR)DSS RDS(on)MAX 38 @ -10V-50V -130mA10@ -5V1. GATE 2. SOURCE 13. DRAIN2FEATURE APPLICATION Energy Efficient DC-DC converters,load switching, power management in portable and battery Low Threshold Voltage -powered products such as computers, High-speed Switching

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