BSS84(Z) Todos los transistores

 

BSS84(Z) MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSS84(Z)

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.36 W

Tensión drenaje-fuente (Vds): 50 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 0.13 A

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 40 pF

Resistencia drenaje-fuente RDS(on): 10 Ohm

Empaquetado / Estuche: SOT23

Búsqueda de reemplazo de MOSFET BSS84(Z)

 

BSS84(Z) Datasheet (PDF)

5.1. bss84lt1rev0x.pdf Size:116K _motorola

BSS84(Z)
BSS84(Z)

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSS84LT1/D BSS84LT1 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel P CHANNEL Field Effect Tr

5.2. bss84rev0.pdf Size:139K _motorola

BSS84(Z)
BSS84(Z)

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSS84/D BSS84 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel P CHANNEL Field Effect Transist

 5.3. bss84.pdf Size:122K _motorola

BSS84(Z)
BSS84(Z)

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSS84/D BSS84 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel P CHANNEL Field Effect Transist

5.4. bss84lt1.pdf Size:120K _motorola

BSS84(Z)
BSS84(Z)

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSS84LT1/D BSS84LT1 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel P CHANNEL Field Effect Tr

 5.5. bss84 2.pdf Size:74K _philips

BSS84(Z)
BSS84(Z)

DISCRETE SEMICONDUCTORS DATA SHEET BSS84 P-channel enhancement mode vertical D-MOS transistor 1997 Jun 18 Product specification Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode BSS84 vertical D-MOS transistor FEATURES PINNING - SOT23 • Low threshold voltage PIN SYMBOL DESCRIPTION

5.6. bss84.pdf Size:139K _fairchild_semi

BSS84(Z)
BSS84(Z)

 July 2002 BSS84 P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode field effect • -0.13A, -50V. RDS(ON) = 10Ω @ VGS = -5 V transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on- • Voltage controlled p-chan

5.7. bss84akmb.pdf Size:1030K _nxp

BSS84(Z)
BSS84(Z)

BSS84AKMB 50 V, single P-channel Trench MOSFET Rev. 1 — 6 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  ElectroStatic Di

5.8. bss84v.pdf Size:209K _diodes

BSS84(Z)
BSS84(Z)

BSS84V DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • Low On-Resistance • Case: SOT-563 • Low Gate Threshold Voltage • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020C • Fast Switching Speed • Lead Free By

5.9. bss84 2.pdf Size:101K _diodes

BSS84(Z)
BSS84(Z)

BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • Low On-Resistance • Case: SOT-23 • Low Gate Threshold Voltage • Case Material: UL Flammability Classification Rating 94V-0 • Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020 • Fast Switching Speed • Terminals: Solderable per MIL-STD-202, Method 208 • Low Input/Out

5.10. bss84w.pdf Size:139K _diodes

BSS84(Z)
BSS84(Z)

BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • Low On-Resistance • Case: SOT-323 • Low Gate Threshold Voltage • Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 • Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020C • Fast Switching Speed • Terminal

5.11. bss84-7.pdf Size:90K _diodes

BSS84(Z)
BSS84(Z)

BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Low On-Resistance ID • Low Gate Threshold Voltage V(BR)DSS RDS(on) max TA = 25°C • Low Input Capacitance • Fast Switching Speed -50V 10Ω @ VGS = -5V -130mA • Low Input/Output Leakage • Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qua

5.12. bss84dw.pdf Size:194K _diodes

BSS84(Z)
BSS84(Z)

BSS84DW DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • Low On-Resistance • Case: SOT-363 • Low Gate Threshold Voltage • Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020C • Fast Switching Speed • Termina

5.13. bss8402dw.pdf Size:173K _diodes

BSS84(Z)
BSS84(Z)

BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • Low On-Resistance • Case: SOT-363 • Low Gate Threshold Voltage • Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Low Input Capacitance • Moisture Sensitiv

5.14. bss84p.pdf Size:97K _infineon

BSS84(Z)
BSS84(Z)

Preliminary data BSS 84 P SIPMOS Small-Signal-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-source on-state resistance RDS(on) 8 Avalanche rated Continuous drain current ID -0.17 A Logic Level 3 dv/dt rated 2 1 VPS05161 Type Package Ordering Code Marking Pin 1 PIN 2 PIN 3 BSS 84 P SOT-23 Q67041-S1417 YBs G S D Maxi

5.15. bss84p .pdf Size:702K _infineon

BSS84(Z)
BSS84(Z)

BSS 84 P SIPMOS Small-Signal-Transistor Product Summary Feature VDS -60 V P-Channel RDS(on) 8 Enhancement mode ID -0.17 A Logic Level PG-SOT-23 Avalanche rated 3 dv/dt rated 2 1 VPS05161 Tape and Reel Type Package Marking Drain BSS 84 P PG-SOT-23 L6327:3000pcs/r. YBs pin 3 Gate BSS 84 P PG-SOT-23 L6433:10000pcs/r. YBs pin1 Source pin 2 Maximum Ratings, at TA

5.16. bss84pw.pdf Size:120K _infineon

BSS84(Z)
BSS84(Z)

BSS84PW SIPMOS Small-Signal-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-source on-state resistance 8 RDS(on) Avalanche rated Continuous drain current -0.15 A ID Logic Level 3 dv/dt rated 2 • Qualified according to AEC Q101 1 VSO05561 • Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Marking

5.17. bss84lt1-d.pdf Size:67K _onsemi

BSS84(Z)
BSS84(Z)

BSS84LT1 Power MOSFET 130 mA, 50 V P-Channel SOT-23 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power http://onsemi.com management circuitry. Typical applications are DC-DC converters, load switching, power management in portable and battery-powered products such as computers, printers, cellular and cordless telepho

5.18. bvss84l sbss84lt1g.pdf Size:95K _onsemi

BSS84(Z)
BSS84(Z)

BSS84L, BVSS84L Power MOSFET Single P-Channel SOT-23 -50 V, 10 W • SOT-23 Surface Mount Package Saves Board Space http://onsemi.com • AEC Q101 Qualified and PPAP Capable - BVSS84L • These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) -50 V 10 W @ 10 V Rating Symbol Value Unit P-Channel Drain-to-Source Voltag

5.19. bss84z.pdf Size:160K _utc

BSS84(Z)
BSS84(Z)

UNISONIC TECHNOLOGIES CO., LTD BSS84Z Preliminary Power MOSFET 0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION These P-Channel enhancement mode field vertical D-MOS transistors are in a SOT-23-3 SMD package, and in most applications they require up to 0.13A DC and can deliver current up to 0.52A. This product is particularly suited to low voltage

5.20. bss84.pdf Size:297K _gsme

BSS84(Z)
BSS84(Z)

桂 林 斯 壯 微 電 子 有 限 責 任 公 司 Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. BSS84 SOT-23 場效應晶體管(SOT-23 Field Effect Transistors) P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement-Mode MOS FETs

5.21. bss84.pdf Size:131K _wietron

BSS84(Z)
BSS84(Z)

BSS84 Small Signal MOSFET P-Channel 3 DRAIN SOT-23 Features: 3 1 *Low On-Resistance : 10 GATE 1 *Low Input Capacitance: 30PF 2 *Low Out put Capacitance : 10PF 2 SOURCE *Low Threshole : 2.0V *Fast Switching Speed : 2.5ns Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc. Maximum Ratings (TA=25 C

5.22. bss84w.pdf Size:793K _wietron

BSS84(Z)
BSS84(Z)

BSS84W P-Channel POWER MOSFET P b Lead(Pb)-Free 3 1 2 Description: * These miniature surface mount MOSFETs reduce power loss SOT-323(SC-70) conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load switching, power management in portable and battery–powered 3 DRAIN products such as computers, printers,

5.23. bss84wt1.pdf Size:377K _willas

BSS84(Z)
BSS84(Z)

FM120-M WILLAS THRU BSS84WT1 Power MOSFET mAmps, 50 Voíts mAmps, 50 Voíts 130 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application

5.24. bss84lt1.pdf Size:381K _willas

BSS84(Z)
BSS84(Z)

FM120-M WILLAS BSS84LT1 THRU mAmps, 50 Voíts Power MOSFET 130 BARRIER RECTIFIERS -20V- 200V FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimi

5.25. bss84n3.pdf Size:301K _cystek

BSS84(Z)
BSS84(Z)

Spec. No. : C465N3 Issued Date : 2009.03.03 CYStech Electronics Corp. Revised Date : 2012.05.18 Page No. : 1/ 8 50V P-CHANNEL Enhancement Mode MOSFET BVDSS -50V BSS84N3 ID -130mA RDSON@VGS=-5V, ID=-100mA 6Ω(typ) Features • Low gate charge • Excellent thermal and electrical capabilities • Pb-free package Equivalent Circuit Outline BSS84N3 SOT-23 D G:Gate

5.26. bss84s6r.pdf Size:299K _cystek

BSS84(Z)
BSS84(Z)

Spec. No. : C465S6R Issued Date : 2012.12.25 CYStech Electronics Corp. Revised Date : Page No. : 1/ 8 Dual P-Channel MOSFET BVDSS -50V BSS84S6R ID -170mA RDSON@VGS=-10V, ID=-100mA 5Ω (typ) RDSON@VGS=-5V, ID=-100mA 6Ω (typ) Features RDSON@VGS=-3V, ID=-30mA 8Ω (typ) • Low on-resistance • High ESD capability • High speed switching • Low-voltage drive(-2.5V)

5.27. bss84ks3.pdf Size:305K _cystek

BSS84(Z)
BSS84(Z)

Spec. No. : C465S3 Issued Date : 2012.05.19 CYStech Electronics Corp. Revised Date : 2013.09.09 Page No. : 1/ 8 50V P-CHANNEL Enhancement Mode MOSFET BVDSS -50V BSS84KS3 ID -170mA 8Ω (MAX) RDSON@-10V 10Ω (MAX) RDSON@-5V 12Ω (MAX) RDSON@-4V Features 32Ω (MAX) RDSON@-2.5V • Low gate charge • Excellent thermal and electrical capabilities • Pb-

5.28. gsmbss84.pdf Size:375K _globaltech_semi

BSS84(Z)
BSS84(Z)

GSMBSS84 GSMBSS84 50V P-Channel Enhancement Mode MOSFET Product Description Features  -50V/-0.1A,RDS(ON)=10Ω@VGS=-5V GSMBSS84, P-Channel enhancement mode  Super high density cell design for extremely MOSFET, uses Advanced Trench Technology to low RDS (ON) provide excellent RDS(ON), low gate charge.  Exceptional on-resistance and maximum DC current capability The

5.29. bss84ta bss84tc.pdf Size:41K _zetex

BSS84(Z)

SOT HA HA T SS8 OD TI A D OS T ISS S T T I D T I S D A SO T A I ATI S T V IT D i V I VD V i D i ID I D i ID V I V ± V Di i i T ° T T i T ° T I A HA A T ISTI S a Ta T I T IT DITI D i VD V V V ID V I V 8 V VD V ID T I V I V I ID µ T ° D i µ T ° V V V V ° T V V V V I V ± V VD V D i D Ω V V i ID VD V T ID I i i V V

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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