BSS84W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BSS84WP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-323 Low Gate Threshold Voltage Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020C Fast Switching Speed Terminal

BSS84WP-Channel POWER MOSFETP b Lead(Pb)-Free312Description:* These miniature surface mount MOSFETs reduce power lossSOT-323(SC-70)conserve energy, making this device ideal for use in small powermanagement circuitry. Typical applications are dcdc converters, loadswitching, power management in portable and batterypowered3 DRAINproducts such as computers, printers,

RoHS COMPLIANT BSS84W P-Channel Enhancement Mode Field Effect Transistor Product Summary V -60 V DS I -0.17 A D R ( at V =-10V) 8 ohm DS(ON) GS R ( at V =-4.5V) 9.9 ohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications Video monitor Power management Absolute Ma

FM120-M WILLASTHRUBSS84WT1Power MOSFETmAmps, 50 VotsmAmps, 50 Vots130FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application

LBSS84WT1GS-LBSS84WT1GPower MOSFET130 mA, 50V PChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.Energy efficient2. DEVICE MARKING AND OR

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSS84LT1/DBSS84LT1Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single P-ChannelPCHANNELField Effect TransistorsENHANCEMENTMODETMOS MOSFET3 DRAIN3121CASE 31808, Style 21GATESOT23 (TO236AB)2 SOURCEMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Rating

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSS84/DBSS84Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single P-ChannelPCHANNELField Effect TransistorsENHANCEMENTMODETMOS MOSFET3 DRAIN3121CASE 31808, Style 21GATESOT23 (TO236AB)2 SOURCEMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Rating Symbol

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSS84LT1/DBSS84LT1Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single P-ChannelPCHANNELField Effect TransistorsENHANCEMENTMODETMOS MOSFET3 DRAIN3121CASE 31808, Style 21GATESOT23 (TO236AB)2 SOURCEMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Rating

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSS84/DBSS84Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single P-ChannelPCHANNELField Effect TransistorsENHANCEMENTMODETMOS MOSFET3 DRAIN3121CASE 31808, Style 21GATESOT23 (TO236AB)2 SOURCEMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Rating Symbol

DISCRETE SEMICONDUCTORSDATA SHEETBSS84P-channel enhancement modevertical D-MOS transistor1997 Jun 18Product specificationSupersedes data of 1995 Apr 07File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationP-channel enhancement modeBSS84vertical D-MOS transistorFEATURES PINNING - SOT23 Low threshold voltagePIN SYMBOL DESCRIPTION

July 2002 BSS84 P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode field effect -0.13A, -50V. RDS(ON) = 10 @ VGS = -5 V transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on- Voltage controlled p-chan

BSS84AKMB50 V, single P-channel Trench MOSFETRev. 1 6 June 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ElectroStatic Di

BSS84AKV50 V, 170 mA dual P-channel Trench MOSFETRev. 1 19 May 2011 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to

BSS84AK50 V, 180 mA P-channel Trench MOSFETRev. 1 23 May 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switc

BSS84AKS50 V, 160 mA dual P-channel Trench MOSFETRev. 1 23 May 2011 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switching AEC-Q101 qualified

BSS84AKW50 V, 150 mA P-channel Trench MOSFETRev. 1 23 May 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switchin

BSS84AKM50 V, 230 mA P-channel Trench MOSFETRev. 1 23 May 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BSS84VDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-563 Low Gate Threshold Voltage Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020C Fast Switching Speed Lead Free By

BSS8402DWCOMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-363 Low Gate Threshold Voltage Case Material: Molded Plastic. Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitiv

BSS84DWDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-363 Low Gate Threshold Voltage Case Material: Molded Plastic. Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020C Fast Switching Speed Termina

BSS84P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-23 Low Gate Threshold Voltage Case Material: UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Solderable per MIL-STD-202, Method 208 Low Input/Out

BSS84P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID Low Gate Threshold Voltage V(BR)DSS RDS(on) max TA = 25C Low Input Capacitance Fast Switching Speed -50V 10 @ VGS = -5V -130mA Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qua

BSS84P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-ResistanceV(BR)DSS RDS(on) max TA = +25C Low Gate Threshold Voltage -50V 10 @ VGS = -5V -130mA Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This MOSFET has been desi

BSS84PWSIPMOS Small-Signal-TransistorFeaturesProduct Summary P-Channel Drain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance 8RDS(on) Avalanche rated Continuous drain current -0.15 AID Logic Level3 dv/dt rated2 Qualified according to AEC Q1011VSO05561 Halogen-free according to IEC61249-2-21Type Package Tape and Reel Marking

BSS 84 PSIPMOS Small-Signal-TransistorProduct SummaryFeatureVDS-60 V P-ChannelRDS(on) 8 Enhancement modeID -0.17 A Logic LevelPG-SOT-23 Avalanche rated3 dv/dt rated21VPS05161Tape and ReelType Package MarkingDrainBSS 84 P PG-SOT-23 L6327:3000pcs/r. YBspin 3GateBSS 84 P PG-SOT-23 L6433:10000pcs/r. YBspin1Sourcepin 2Maximum Ratings, at TA

Preliminary dataBSS 84 PSIPMOS Small-Signal-TransistorFeaturesProduct Summary P-ChannelDrain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance RDS(on) 8 Avalanche ratedContinuous drain current ID -0.17 A Logic Level3 dv/dt rated21VPS05161Type Package Ordering Code Marking Pin 1 PIN 2 PIN 3BSS 84 P SOT-23 Q67041-S1417 YBs G S DMaxi

BSS84AFeatures High Density Cell Design for Ultra Low RDS(on) Rugged and Reliable Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 P-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings Operating Junct

BSS84KWFeatures Energy Efficient High-Speed Switching Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 P-CHANNEL Halogen Free. Green Device (Note 1)MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings Operating Junction Temperature Range : -55C to +150C

BSS84Features High Density Cell Design for Ultra Low RDS(on) Rugged and Reliable Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 P-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings Operating Juncti

BSS84L, BVSS84LPower MOSFETSingle P-Channel SOT-23-50 V, 10 W SOT-23 Surface Mount Package Saves Board Spacewww.onsemi.com BV Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableV(BR)DSS RDS(ON) MAX These Devices are Pb-Free and are RoHS Compliant-50 V 10 W @ 10 VMAXIMUM RATINGS (TJ

BSS84L, BVSS84LPower MOSFETSingle P-Channel SOT-23-50 V, 10 W SOT-23 Surface Mount Package Saves Board Spacehttp://onsemi.com AEC Q101 Qualified and PPAP Capable - BVSS84L These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted) -50 V 10 W @ 10 VRating Symbol Value UnitP-ChannelDrain-to-Source Voltag

BSS84LT1Power MOSFET130 mA, 50 VP-Channel SOT-23These miniature surface mount MOSFETs reduce power lossconserve energy, making this device ideal for use in small powerhttp://onsemi.commanagement circuitry. Typical applications are DC-DC converters,load switching, power management in portable and battery-poweredproducts such as computers, printers, cellular and cordless telepho

BSS84 P-Channel Enhancement Mode Field-Effect TransistorDescription Features This P-channel enhancement-mode field-effect -0.13 A, -50 V, RDS(ON) = 10 at VGS = -5 Vtransistor is produced using ON Semiconductors Voltage-Controlled P-Channel Small-Signal proprietary, high cell density, DMOS technology. Switch This very high density process minimizes on-state resista

UNISONIC TECHNOLOGIES CO., LTD BSS84Z Preliminary Power MOSFET 0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION These P-Channel enhancement mode field vertical D-MOS transistors are in a SOT-23-3 SMD package, and in most applications they require up to 0.13A DC and can deliver current up to 0.52A. This product is particularly suited to low voltage

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETsBSS84 P-CHANNEL MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 8@-10V3-50V-0.13A@10 -5V1DESCRIPTION 2These miniature surface mount MOSFETs reduce power loss conserve 1. GATE energy, making this device ideal for use in small power management circuitry. 2. SOURCE 3. DRAIN

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.BSS84SOT-23 (SOT-23 Field Effect Transistors)P-Channel Enhancement-Mode MOS FETsP-Channel Enhancement-Mode MOS FETsP-Channel Enhancement-Mode MOS FETs

BSS84Small Signal MOSFETP-Channel3 DRAINSOT-23Features:31*Low On-Resistance : 10 GATE1 *Low Input Capacitance: 30PF2*Low Out put Capacitance : 10PF 2SOURCE*Low Threshole : 2.0V*Fast Switching Speed : 2.5nsApplication:* DC to DC Converter* Cellular & PCMCIA Card* Cordless Telephone* Power Management in Portable and Battery etc.Maximum Ratings (TA=25 C

FM120-M WILLASBSS84LT1THRU mAmps, 50 VotsPower MOSFET 130 BARRIER RECTIFIERS -20V- 200VFM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimi

Spec. No. : C465S3 Issued Date : 2012.05.19 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/ 8 50V P-CHANNEL Enhancement Mode MOSFET BVDSS -50VBSS84KS3 ID -170mA 8 (MAX) RDSON@-10V 10 (MAX) RDSON@-5V 12 (MAX) RDSON@-4V Features 32 (MAX) RDSON@-2.5V Low gate charge Excellent thermal and electrical capabilities Pb-

Spec. No. : C465N3 Issued Date : 2009.03.03 CYStech Electronics Corp.Revised Date : 2012.05.18 Page No. : 1/ 8 50V P-CHANNEL Enhancement Mode MOSFET BVDSS -50VBSS84N3 ID -130mARDSON@VGS=-5V, ID=-100mA 6(typ) Features Low gate charge Excellent thermal and electrical capabilities Pb-free package Equivalent Circuit Outline BSS84N3 SOT-23 D GGate

Spec. No. : C465S6R Issued Date : 2012.12.25 CYStech Electronics Corp.Revised Date : Page No. : 1/ 8 Dual P-Channel MOSFET BVDSS -50VBSS84S6R ID -170mARDSON@VGS=-10V, ID=-100mA 5 (typ)RDSON@VGS=-5V, ID=-100mA 6 (typ)Features RDSON@VGS=-3V, ID=-30mA 8 (typ) Low on-resistance High ESD capability High speed switching Low-voltage drive(-2.5V)

BSS84 Rev.I Nov.-2023 DATA SHEET / Descriptions SOT-23 P P-CHANNEL MOSFET in a SOT-23 Plastic Package. / Features C-MOS TTL 1000V Low threshold voltage, Direct interface to C-MOS, TTL etc, High-speed switching,ESD Improved Capabili

LBSS84LT1GS-LBSS84LT1GPower MOSFET130 mA, 50V PChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.Energy efficient2. DEVICE MARKING AND O

LESHAN RADIO COMPANY, LTD.Power MOSFET mAmps, 50 Vots130PChannel SC88LBSS84DW1T1GS-LBSS84DW1T1GThese miniature surface mount MOSFETs reduce power lossconserve energy, making this device ideal for use in small powermanagement circuitry. Typical applications are dcdc converters, loadswitching, power management in portable and batterypoweredproducts such as compute

LBSS84ELT1GS-LBSS84ELT1GPower MOSFET 60V PChannel1. FEATURESAdvanced trench cell design.High speed switch.G-S ESD Protected: 1000VPb-Free Package is available.We declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change re

BSS8402DW COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETSThis space-efficient device contains an electrically-isolated complimentary pairof enhancement-mode MOSFETs (one N-channel and one P-channel). It SOT- 363comes in a very small SOT-363 package. This device is ideal forportable applications where board space is at a premium.44FEATURES55Complimentary Pairs 6633Low O

BSS84P-CHANNEL ENHANCEMENT MODE MOSFETSOT- 23This is a P-channel, enhancement-mode MOSFET, housed in the industry-standard, SOT-23 package. This device is ideal for portable applicationswhere board space is at a premium.3FEATURES2Low On-ResistanceLow Gate Threshold VoltageFast Switching1Available in lead-free plating (100% matte tin finish)Drain3APPLICATIONSSwi

GSMBSS84 GSMBSS84 50V P-Channel Enhancement Mode MOSFET Product Description Features -50V/-0.1A,RDS(ON)=10@VGS=-5V GSMBSS84, P-Channel enhancement mode Super high density cell design for extremely MOSFET, uses Advanced Trench Technology to low RDS (ON) provide excellent RDS(ON), low gate charge. Exceptional on-resistance and maximum DCcurrent capability The

BSS84P-Channel Enhancement-Mode MOS FETsP-Channel Enhancement-Mode MOS FETsP-Channel Enhancement-Mode MOS FETsP-Channel Enhancement-Mode MOS FETsMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSCharacteristic Symbol Max UnitDrain-Source VoltageBVDSS -50 VGate- Source VoltageVGS +20 VDrain Current (continuous)IDR -130 mADrain Current (pulsed)IDRM -520

RUMWUMW BSS84UMW BSS84UMW BSS84P-Channel Enhancement Mode MOSFETSOT23 Features VDS (V) = -50V ID = -0.13 A RDS(ON) 10 (VGS = -5V)1. GATE MARKING2. SOURCE 3. DRAIN P. D Y Absolute Maximum Ratings Ta = 25 unless otherwise specifiedParameter Symbol Rating UnitDrain-Source Voltage VDSS -50 VGate-Source Voltage VGSS 20 VDrain C

SOT HA HA T SS8 OD TI A D OS TISS S T T I D T I SDA SO T A I ATI S T V ITD i V I VD V i D i ID I D i ID V I V V Di i i T T T i T T I A HA A T ISTI S a Ta T I T IT DITI D i VD V V V ID V I V 8 V VD V ID T I V I V I ID T D i T V V V V T V V V V I V V VD VD i D V V i ID VD VT ID I i i V V

P-Channel MOSFET BSS84SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE Load Switch for Portable Devices 3. DRAIN DC/DC Converter MARKING: SP or B 8 4MAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Max Unit Drain-So

BSS84 P-Ch 60V Fast Switching MOSFETs Description Product Summary VDS -60 V The BSS84 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and RDS(ON),max 6 efficiency for most of the small power switching and load switch applications. ID -0.3 A The BSS84 meet the RoHS and Green Product requirement with full function reliability approved.

BSS84SOT-23 Plastic-Encapsulate MOSFETS-50V P-Channel MOSFETSOT-23 ID V(BR)DSS RDS(on)MAX 38 @ -10V-50V -130mA10@ -5V1. GATE 2. SOURCE 13. DRAIN2FEATURE APPLICATION Energy Efficient DC-DC converters,load switching, power management in portable and battery Low Threshold Voltage -powered products such as computers, High-speed Switching

DATA SHEET BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR VOLTAGE -60 V CURRENT -130mA FEATURES DESIGNED FOR HIGH SPEED PULSE AMPLIFIER AND D DRIVE APPLICATION. HIGH DENSITY CELL DESIGN FOR LOW RDS(ON) VOLTAGE CONTROLLED SMALL SIGNAL SWITCHING. S HIGH SATURATION CURRENT CAPABILITY. LEAD FREE AND HALOGEN-FREE. MECHANICAL DATA G CASE:

BSS84-50V/-0.18A P Channel Small Signal MOSFETFeatures V R Typ I Max (BR)DSS DS(ON) D Low RDS(on) @VGS=-10V1.8 @ -10V -5V Logic Level Control-50V -0.18A P Channel SOT23 Package2 @ -4.5V ESD Protection Pb-Free, RoHS CompliantApplications High-side Load Switch Switching Circuits High Speed line Driver General Purpose Interfacin

RoHS COMPLIANT BSS84 P-Channel Enhancement Mode Field Effect Transistor Product Summary V -60 V DS I -0.17 A D R ( at V =-10V) 8 ohm DS(ON) GS R ( at V =-4.5V) 10 ohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications Video monitor Power management Absolute Maxi

Complementary Pair Enhancement Mode Field Effect Transistor BSS8402DW FEATURES Low On-Resistance. Pb Low Gate Threshold Voltage. Lead-free Low Input Capacitance. Fast Switching Speed. Low Input/Output Leakage. Complementary Pair. SOT-363 ORDERING INFORMATION Type No. Marking Package Code BSS8402DW KNP SOT-363 MAXIMUM RATING Total Device @ Ta

P-Channel Enhancement Mode Field Effect TransistorFEATURES Low On-Resistance Pb Low Gate Threshold Voltage. Lead-free Low Input Capacitance. Fast Switching Speed. Available in Lead Free Version. APPLICATIONS P-channel enhancement mode effect transistor. SOT-323 ORDERING INFORMATION Type No. Marking Package Code K84 SOT-323 MAXIMUM RATING