ZXM64P035L3 Todos los transistores

 

ZXM64P035L3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXM64P035L3

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.5 W

Tensión drenaje-fuente (Vds): 35 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 3.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1 V

Carga de compuerta (Qg): 46 nC

Conductancia de drenaje-sustrato (Cd): 825 pF

Resistencia drenaje-fuente RDS(on): 0.105 Ohm

Empaquetado / Estuche: TO220

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ZXM64P035L3 Datasheet (PDF)

1.1. zxm64p035gta.pdf Size:100K _upd-mosfet

ZXM64P035L3
ZXM64P035L3

ZXM64P035G 35V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -35V: RDS(on) = 0.075 : ID = -5.3A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on

1.2. zxm64p035l3.pdf Size:106K _diodes

ZXM64P035L3
ZXM64P035L3

ZXM64P035L3 35V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -35V: RDS(on) = 0.075 : ID = -12A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-re

 2.1. zxm64p03xta.pdf Size:331K _upd-mosfet

ZXM64P035L3
ZXM64P035L3

ZXM64P03X 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.075 ID=-3.8A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistance MSOP

2.2. zxm64p03x.pdf Size:333K _diodes

ZXM64P035L3
ZXM64P035L3

ZXM64P03X 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.075 ID=-3.8A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance MSOP8

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