ZXMP4A16K Todos los transistores

 

ZXMP4A16K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMP4A16K

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 9.5 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 9.9 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 29.6 nC

Conductancia de drenaje-sustrato (Cd): 965 pF

Resistencia drenaje-fuente RDS(on): 0.1 Ohm

Empaquetado / Estuche: TO252, DPAK

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ZXMP4A16K Datasheet (PDF)

1.1. zxmp4a16ktc.pdf Size:574K _upd-mosfet

ZXMP4A16K
ZXMP4A16K

ZXMP4A16K 40V P-channel enhancement mode MOSFET Summary V(BR)DSS= -40V; RDS(ON)= 0.060 ID= -9.9A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. Features D • Low on-resistance

1.2. zxmp4a16k.pdf Size:576K _diodes

ZXMP4A16K
ZXMP4A16K

ZXMP4A16K 40V P-channel enhancement mode MOSFET Summary V(BR)DSS= -40V; RDS(ON)= 0.060 ID= -9.9A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. Features D Low on-resistance F

 2.1. zxmp4a16gta.pdf Size:270K _upd-mosfet

ZXMP4A16K
ZXMP4A16K

ZXMP4A16G 40V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -40V: RDS(on) = 0.060 : ID = -6.4A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES Low on-resistanc

2.2. zxmp4a16g.pdf Size:271K _diodes

ZXMP4A16K
ZXMP4A16K

ZXMP4A16G 40V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -40V: RDS(on) = 0.060 : ID = -6.4A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES Low on-resistance

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