ZXMP6A16DN8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXMP6A16DN8
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2.15 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 3.9 A
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 1021 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
Encapsulados: SO8
Búsqueda de reemplazo de ZXMP6A16DN8 MOSFET
- Selecciónⓘ de transistores por parámetros
ZXMP6A16DN8 datasheet
..1. Size:187K diodes
zxmp6a16dn8.pdf 
ZXMP6A16DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.085 ; ID= -3.9A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistan
6.1. Size:569K diodes
zxmp6a16k.pdf
ZXMP6A16K 60V DPAK P-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (A) 0.085 @ VGS= -10V 8.2 -60 0.125 @ VGS= -4.5V 6.75 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast G switching, making it ideal for high efficiency power management applications. Features S Low on-r
6.2. Size:565K zetex
zxmp6a16ktc.pdf
ZXMP6A16K 60V DPAK P-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (A) 0.085 @ VGS= -10V 8.2 -60 0.125 @ VGS= -4.5V 6.75 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast G switching, making it ideal for high efficiency power management applications. Features S Low on-r
7.1. Size:665K diodes
zxmp6a17e6 zxmp6a17e6ta.pdf
A Product Line of Diodes Incorporated ZXMP6A17E6 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID Max Fast switching speed V(BR)DSS RDS(on) Max TA = 25 C Low threshold (Note 5) Low gate drive Low input capacitance 125m @ VGS = -10V -3.0 A Lead Free , RoHS Compliant (Note 1) -60V 190m @
7.3. Size:684K diodes
zxmp6a17k.pdf
A Product Line of Diodes Incorporated ZXMP6A17K 60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 125m @ VGS= -10V -6.6A -60V 190m @ VGS= -4.5V -5.3A
7.4. Size:681K diodes
zxmp6a17ktc.pdf
A Product Line of Diodes Incorporated ZXMP6A17K 60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 125m @ VGS= -10V -6.6A -60V 190m @ VGS= -4.5V -5.3A
7.5. Size:635K diodes
zxmp6a17g zxmp6a17gta.pdf
A Product Line of Diodes Incorporated ZXMP6A17G 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25 C Low input capacitance 125m @ VGS= -10V -4.3A Green component and RoHS compliant (Note 1) -60V Qualified to AEC-Q101 Standards for High Reliability 190m
7.6. Size:667K diodes
zxmp6a17n8 zxmp6a17n8tc.pdf
A Product Line of Diodes Incorporated ZXMP6A17N8 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low input capacitance TA = 25 C Green component and RoHS compliant (Note 1) 125m @ VGS = -10V -3.4A Qualified to AEC-Q101 Standards for High Reliability -60V 190m @ VGS = -4.5V -2
7.7. Size:216K diodes
zxmp6a17gq.pdf
ZXMP6A17GQ Green 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Fast Switching Speed V(BR)DSS RDS(on) TA = +25 C Low Gate Drive Low Input Capacitance 125m @ VGS= -10V -4.3A -60V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 190m @ VGS= -4.5V -3.5A Halogen and Antimony Free. Green Device (Note 3) Quali
7.8. Size:282K diodes
zxmp6a13fq.pdf
ZXMP6A13FQ 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Fast switching speed Max ID V(BR)DSS Max RDS(on) Low input capacitance TA = +25 C Low gate charge 400m @ VGS = -10V -1.1A -60V Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 600m @ VGS = -4.5V -0.9A Halogen and Antimony Free. Green Device (Note 3) Qu
7.9. Size:183K diodes
zxmp6a18dn8.pdf
ZXMP6A18DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistan
7.10. Size:493K diodes
zxmp6a17e6q.pdf
ZXMP6A17E6Q 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max Fast Switching Speed V(BR)DSS RDS(on) Max TA = +25 C Low Threshold (Note 7) Low Gate Drive -3.0 A 125m @ VGS = -10V Low Input Capacitance -60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 190m @ VGS = -4.5V -2.4 A
7.11. Size:542K diodes
zxmp6a17e6.pdf
ZXMP6A17E6 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max Fast Switching Speed V(BR)DSS RDS(on) Max TA = +25 C Low Threshold (Note 6) Low Gate Drive 125m @ VGS = -10V -3.0 A Low Input Capacitance -60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 190m @ VGS = -4.5V -2.4 A
7.12. Size:294K diodes
zxmp6a13f.pdf
A Product Line of Diodes Incorporated ZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Fast switching speed ID Low input capacitance V(BR)DSS RDS(on) TA = 25 C Low gate charge Qualified to AEC-Q101 Standards for High Reliability 400m @ VGS= -10V 400m = -1
7.13. Size:467K diodes
zxmp6a17g.pdf
ZXMP6A17G Green 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Fast Switching Speed BVDSS RDS(on) TA = +25 C Low Gate Drive Low Input Capacitance 125m @ VGS= -10V -4.3A -60V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 190m @ VGS= -4.5V -3.5A Halogen and Antimony Free. Green Device (Note 3) Qualified
7.14. Size:317K diodes
zxmp6a13fta.pdf
A Product Line of Diodes Incorporated ZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Fast switching speed Max ID V(BR)DSS Max RDS(on) Low input capacitance TA = 25 C Low gate charge 400m @ VGS = -10V -1.1A -60V Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 600m @ VGS = -4.5V -0.9A Halogen and Antimony Free.
7.15. Size:652K diodes
zxmp6a13gta.pdf
A Product Line of Diodes Incorporated ZXMP6A13G 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25 C Low input capacitance 390m @ VGS = -10V -2.3A Lead Free , RoHS Compliant (Note 1) -60V Halogen and Antimony Free. "Green" Device (Note 2) 595m @ VGS =
7.16. Size:686K diodes
zxmp6a13g.pdf
A Product Line of Diodes Incorporated ZXMP6A13G 60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25 C Low input capacitance 390m @ VGS= -10V -2.3A Qualified to AEC-Q101 Standards for High Reliability -60V
7.17. Size:583K diodes
zxmp6a18k.pdf
ZXMP6A18K 60V P-channel enhancement mode MOSFET Summary V(BR)DSS = -60V RDS(on) = 0.055 ID = -10.4A Description D This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, G power management applications. Features S Low on-
7.18. Size:580K zetex
zxmp6a18ktc.pdf
ZXMP6A18K 60V P-channel enhancement mode MOSFET Summary V(BR)DSS = -60V RDS(on) = 0.055 ID = -10.4A Description D This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, G power management applications. Features S Low on-
7.19. Size:925K cn vbsemi
zxmp6a18dn8ta.pdf
ZXMP6A18DN8TA www.VBsemi.tw Dual P-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.059 at VGS = - 10 V - 5.3 100 % UIS Tested RoHS - 60 17 nC COMPLIANT 0.069 at VGS = - 4.5 V - 5.0 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 T
7.20. Size:882K cn vbsemi
zxmp6a18ktc.pdf
ZXMP6A18KTC www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET - 60 26 0.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge
Otros transistores... DMP57D5UV
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History: 2SK3035
| FQB5N90
| KF19N20D
