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ZXMP6A17E6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMP6A17E6
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 637 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: SOT26
     - Selección de transistores por parámetros

 

ZXMP6A17E6 Datasheet (PDF)

 ..1. Size:665K  diodes
zxmp6a17e6 zxmp6a17e6ta.pdf pdf_icon

ZXMP6A17E6

A Product Line ofDiodes IncorporatedZXMP6A17E660V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID Max Fast switching speed V(BR)DSS RDS(on) Max TA = 25C Low threshold(Note 5) Low gate drive Low input capacitance 125m @ VGS = -10V -3.0 A Lead Free, RoHS Compliant (Note 1) -60V 190m @

 ..2. Size:542K  diodes
zxmp6a17e6.pdf pdf_icon

ZXMP6A17E6

ZXMP6A17E6 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max Fast Switching Speed V(BR)DSS RDS(on) Max TA = +25C Low Threshold (Note 6) Low Gate Drive 125m @ VGS = -10V -3.0 A Low Input Capacitance -60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 190m @ VGS = -4.5V -2.4 A

 0.1. Size:493K  diodes
zxmp6a17e6q.pdf pdf_icon

ZXMP6A17E6

ZXMP6A17E6Q 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max Fast Switching Speed V(BR)DSS RDS(on) Max TA = +25C Low Threshold (Note 7) Low Gate Drive -3.0 A 125m @ VGS = -10V Low Input Capacitance -60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 190m @ VGS = -4.5V -2.4 A

 6.1. Size:170K  diodes
zxmp6a17dn8.pdf pdf_icon

ZXMP6A17E6

ZXMP6A17DN8DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -60V; RDS(ON) = 0.125 ; ID= -3.2ADESCRIPTIONThis new generation of high cell density trench MOSFETs from Zetex utilizes aunique structure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES

Otros transistores... ZXMP4A16G , ZXMP4A16K , ZXMP4A57E6 , ZXMP6A13F , ZXMP6A13G , ZXMP6A16DN8 , ZXMP6A16K , ZXMP6A17DN8 , 5N65 , ZXMP6A17G , ZXMP6A17K , ZXMP6A17N8 , ZXMP6A18DN8 , ZXMP6A18K , ZXMP7A17G , ZXMP7A17K , ZVP4424Z .

History: STP140NF75 | SSG4394N | CEM9435 | HUF75623P3 | AON3806 | SSM6L05FU | STS4DPF30L

 

 
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