ZXMP6A17K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXMP6A17K
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 9.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.6 A
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 637 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Búsqueda de reemplazo de ZXMP6A17K MOSFET
- Selecciónⓘ de transistores por parámetros
ZXMP6A17K datasheet
zxmp6a17k.pdf
A Product Line of Diodes Incorporated ZXMP6A17K 60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 125m @ VGS= -10V -6.6A -60V 190m @ VGS= -4.5V -5.3A
zxmp6a17ktc.pdf
A Product Line of Diodes Incorporated ZXMP6A17K 60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 125m @ VGS= -10V -6.6A -60V 190m @ VGS= -4.5V -5.3A
zxmp6a17e6 zxmp6a17e6ta.pdf
A Product Line of Diodes Incorporated ZXMP6A17E6 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID Max Fast switching speed V(BR)DSS RDS(on) Max TA = 25 C Low threshold (Note 5) Low gate drive Low input capacitance 125m @ VGS = -10V -3.0 A Lead Free , RoHS Compliant (Note 1) -60V 190m @
Otros transistores... ZXMP4A57E6 , ZXMP6A13F , ZXMP6A13G , ZXMP6A16DN8 , ZXMP6A16K , ZXMP6A17DN8 , ZXMP6A17E6 , ZXMP6A17G , RU7088R , ZXMP6A17N8 , ZXMP6A18DN8 , ZXMP6A18K , ZXMP7A17G , ZXMP7A17K , ZVP4424Z , ZVP4525E6 , ZVP4525G .
History: BSC094N06LS5
History: BSC094N06LS5
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