ZXMP10A17E6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ZXMP10A17E6
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.6 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 7.1 nC
   Cossⓘ - Capacitancia de salida: 424 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
   Paquete / Cubierta: SOT26

Búsqueda de reemplazo de MOSFET ZXMP10A17E6

ZXMP10A17E6 Datasheet (PDF)

..1. Size:699K diodes
zxmp10a17e6 zxmp10a17e6ta.pdf

A Product Line ofDiodes IncorporatedZXMP10A17E6100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 350m @ VGS= -10V -1.6 Qualified to AEC-Q101 Standards for High Reliability -1

..2. Size:600K diodes
zxmp10a17e6.pdf

ZXMP10A17E6 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Fast Switching Speed V(BR)DSS RDS(on) TA = +25C Low Gate Drive 350m @ VGS= -10V -1.6A Low Input Capacitance -100V 450m @ VGS= -6V -1.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Q

0.1. Size:639K diodes
zxmp10a17e6q.pdf

ZXMP10A17E6Q 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Fast Switching Speed V(BR)DSS RDS(ON) TA = +25C Low Gate Drive 350m @ VGS= -10V -1.6A Low Input Capacitance -100V 450m @ VGS= -6.0V -1.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)

5.1. Size:636K diodes
zxmp10a17g.pdf

A Product Line ofDiodes IncorporatedZXMP10A17G100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 350m @ VGS= -10V -2.4 Qualified to AEC-Q101 Standards for High Reliability -10

5.2. Size:678K diodes
zxmp10a17k.pdf

A Product Line ofDiodes IncorporatedZXMP10A17K 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 350m @ VGS= -10V -3.9A Qualified to AEC-Q101 Standards for High Reliability -1

5.3. Size:762K cn vbsemi
zxmp10a17gta.pdf

ZXMP10A17GTAwww.VBsemi.twP-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100% Rg and UIS Tested0.200 at VGS = - 10 V - 3.0- 100 13.2 nC0.230 at VGS = - 6 V - 2.4APPLICATIONSAvailable Active Clamp in Intermediate DC/DC Power SuppliesS H-Bridge High Side Switch forLighting Applicatio

Otros transistores... ZXMP7A17G , ZXMP7A17K , ZVP4424Z , ZVP4525E6 , ZVP4525G , ZVP4525Z , ZXMP10A13F , ZXMP10A16K , IRF840 , ZXMP10A17G , ZXMP10A17K , ZXMP10A18G , ZXMP10A18K , ZXMP2120E5 , ZXMP2120FF , ZXMP2120G4 , DMC2004DWK .

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