ZXMP2120G4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ZXMP2120G4
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.2 A

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 25 Ohm
   Paquete / Cubierta: SOT223

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ZXMP2120G4 Datasheet (PDF)

..1. Size:416K diodes
zxmp2120g4.pdf

ZXMP2120G4200V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS =-200V; RDS(ON) = 25 ; ID = 200mADESCRIPTIONThis 200V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device includ

0.1. Size:415K zetex
zxmp2120g4ta.pdf

6.1. Size:386K diodes
zxmp2120e5.pdf

ZXMP2120E5200V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mADESCRIPTIONThis 200V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device inclu

6.2. Size:417K diodes
zxmp2120ff.pdf

ZXMP2120FF200V SOT23F P-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (mA)-200 28 @ VGS= -10V -137DescriptionThis 200V enhancement mode P-channel MOSFET provides users witha competitive specification offering efficient power handling capability,high impedance and freedom from thermal runaway and thermallyinduced secondary breakdown.Applications benefiting from

6.3. Size:384K zetex
zxmp2120e5ta.pdf