DMC3021LSD Todos los transistores

 

DMC3021LSD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMC3021LSD

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8.5 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm

Encapsulados: SO8

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DMC3021LSD datasheet

 ..1. Size:182K  diodes
dmc3021lsd.pdf pdf_icon

DMC3021LSD

DMC3021LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SO-8 N-Channel 21m @ 10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 32m @ 4.5V Moisture Sensitivity Level 1 per J-STD-020 P-Channel 39m @ 10V 53m @ 4.5V Terminals Connecti

 0.1. Size:255K  diodes
dmc3021lsdq.pdf pdf_icon

DMC3021LSD

DMC3021LSDQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features ID Max Low On-Resistance Device V(BR)DSS RDS(on) max TA = +25 C Low Input Capacitance Fast Switching Speed 21m @ VGS = 10V 8.5A Q2 30V Low Input/Output Leakage 32m @ VGS = 4.5V 7.2A Complementary Pair MOSFET 39m @ VGS = -10V -7A Q1 -30V Totally Lead-Free & Fully

 6.1. Size:387K  diodes
dmc3021lk4.pdf pdf_icon

DMC3021LSD

DMC3021LK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications ID max Device V(BR)DSS RDS(ON) max TC = +25 C PCB Footprint of 4mm2 Low Gate Threshold Voltage 21m @ VGS = 10V 14A Q1 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 32m @ VGS = 4.5V 14A Halog

 8.1. Size:446K  fairchild semi
fdmc3020dc.pdf pdf_icon

DMC3021LSD

October 2010 FDMC3020DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 6.25 m at VGS = 10 V, ID = 12 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m a

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