DMC3032LSD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DMC3032LSDCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 N-Channel: 32m @ 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 46m @ 4.5V Moisture Sensitivity: Level 1 per J-STD-020 P-Channel: 39m @ 10V 53m @ 4.5V Terminals Connecti

DMC3035LSDCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Complementary Pair MOSFETs Case: SOP-8L Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 N-Channel: 35m @ 10V Moisture Sensitivity: Level 1 pe

DMC3036LSDCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data Complementary Pair MOSFETs Case: SOP-8L Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 N-Channel: 36m @ 10V Moisture Sensitivity: Level 1 per J-STD-020D 61m @ 4.5V Terminals Connections: See

October 2010FDMC3020DCN-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 6.25 m at VGS = 10 V, ID = 12 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m a

DMC3018LSDCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data Complementary Pair MOSFET Case: SO-8 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 N-Channel: 20m @ 10V Moisture Sensitivity: Level 1 per J-STD-020 32m @ 4.5V Terminals Connections: See Diag

DMC3028LSDX Electrical Characteristics Q2 (@TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250A Zero Gate Voltage Drain Current IDSS -1 A VDS = -24V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS

DMC3016LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Input Capacitance Device V(BR)DSS RDS(on) max TA = +25C Low On-Resistance Fast Switching Speed 16m @ VGS = 10V 8.2A Q2 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20m @ VGS = 4.5V 7.3A Halogen and Antimony Free. Green Device (Not

A Product Line ofDiodes IncorporatedDMC3028LSD30V COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID Device V(BR)DSS RDS(on) Fast switching speed TA = 25C Green Component and RoHS Compliant (Note 1) 28m @ VGS= 10V 7.1A Q1 30V45m @ VGS=

DMC3021LSDCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 N-Channel: 21m @ 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 32m @ 4.5V Moisture Sensitivity: Level 1 per J-STD-020 P-Channel: 39m @ 10V 53m @ 4.5V Terminals Connecti

DMC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET Product Summary Features ID MAX Low On-Resistance Device V(BR)DSS RDS(ON) max Package Low Input Capacitance TA = +25C Fast Switching Speed 20m @ VGS = 10V 8.5A N-Channel 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 7.0A 32m @ VGS = 4.5V SO-8 Halogen and Antimony Free. Gr

DMC3021LSDQCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features ID Max Low On-ResistanceDevice V(BR)DSS RDS(on) max TA = +25C Low Input Capacitance Fast Switching Speed 21m @ VGS = 10V 8.5A Q2 30V Low Input/Output Leakage 32m @ VGS = 4.5V 7.2A Complementary Pair MOSFET39m @ VGS = -10V -7A Q1 -30V Totally Lead-Free & Fully

DMC3021LK4COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications ID max Device V(BR)DSS RDS(ON) max TC = +25C PCB Footprint of 4mm2 Low Gate Threshold Voltage 21m @ VGS = 10V 14A Q1 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 32m @ VGS = 4.5V 14A Halog

DMC30401Total pages pageTentativeDMC30401Silicon NPN epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplificationMarking Symbol : A8Package Code : SSSMini6-F2-BInternal Connection6 5 4Absolute Maximum RatingsTa = 25 CParameter Symbol Rating UnitCollector-base voltage (Emitter open) VCBO 60 VCollector-emitter voltage (Base open) VCE

DMC3018LSD-13www.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 a