2SK724 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK724

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 100 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.67 Ohm

Empaquetado / Estuche: TO3P

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2SK724 Datasheet (PDF)

5.1. 2sk726.pdf Size:52K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK726 DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATI

5.2. 2sk723.pdf Size:52K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK723 DESCRIPTION ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATI

5.3. 2sk727.pdf Size:52K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK727 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATI

5.4. 2sk725.pdf Size:166K _update