2SK724 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK724
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   tonⓘ - Tiempo de encendido: 130 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.67 Ohm
   Paquete / Cubierta: TO3P

Búsqueda de reemplazo de MOSFET 2SK724

2SK724 Datasheet (PDF)

..1. Size:133K 1
2sk724.pdf

..2. Size:236K inchange semiconductor
2sk724.pdf

isc N-Channel MOSFET Transistor 2SK724DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor

9.1. Size:161K nec
2sk720a.pdf

9.2. Size:33K fuji
2sk727.pdf

9.3. Size:162K fuji
2sk725.pdf

9.4. Size:236K inchange semiconductor
2sk727.pdf

isc N-Channel MOSFET Transistor 2SK727DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c

9.5. Size:236K inchange semiconductor
2sk726.pdf

isc N-Channel MOSFET Transistor 2SK726DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c

9.6. Size:236K inchange semiconductor
2sk723.pdf

isc N-Channel MOSFET Transistor 2SK723DESCRIPTIONDrain Current I =7A@ T =25D CDrain Source Voltage-: V =500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c

9.7. Size:236K inchange semiconductor
2sk725.pdf

isc N-Channel MOSFET Transistor 2SK725DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor

Otros transistores... 2SK680A , 2SK681A , 2SK699 , 2SK700 , 2SK701 , 2SK702 , 2SK703 , 2SK705 , 18N50 , 2SK738 , 2SK739 , 2SK799 , 2SK801 , 2SK802 , 2SK814 , 2SK875 , 2SK876 .

Liste

Recientemente añadidas las descripciónes de los transistores: