ZXMS6005SG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXMS6005SG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.6 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de MOSFET ZXMS6005SG
ZXMS6005SG Datasheet (PDF)
zxms6005sgq.pdf
ZXMS6005SGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS = 60V Compact High Power Dissipation Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2A Logic Level Input (3.3V and 5V) Clamping Energy 480mJ Short Circuit Pro
zxms6005dt8.pdf
A Product Line ofDiodes Incorporated ZXMS6005DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 1.8 A Clamping Energy 210 mJ SM8 PackageDESCRIPTION The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates ove
zxms6005dgq.pdf
ZXMS6005DGQ60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit Protect
zxms6005dt8q.pdf
ZXMS6005DT8Q Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact Dual Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 1.8A Logic Level Input (3.3V and 5V) Clamping Energy 210mJ Short Circuit Protection with Aut
zxms6005dg.pdf
A Product Line ofDiodes Incorporated ZXMS6005DG60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 2 A SOT223 PackageClamping Energy 490 mJ DESCRIPTION The ZXMS6005DG is a self protected low side MOSFET with logic Slevel input. It integrates over-te
zxms6005dgq-13.pdf
ZXMS6005DGQ-13 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-state Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2.0A Logic Level Input (3.3V and 5V) Short Circuit Protection with Auto Restart
Otros transistores... ZXMS6002G , ZXMS6003G , ZXMS6004DG , ZXMS6004DT8 , ZXMS6004FF , ZXMS6004SG , ZXMS6005DG , ZXMS6005DT8 , MMIS60R580P , ZXMS6006DG , ZXMS6006DT8 , ZXMS6006SG , ZXMHC10A07N8 , ZXMHC10A07T8 , ZXMHC3A01N8 , ZXMHC3A01T8 , ZXMHC3F381N8 .
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