ZXMHC10A07N8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ZXMHC10A07N8
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.1 A

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET ZXMHC10A07N8

ZXMHC10A07N8 Datasheet (PDF)

4.1. Size:287K diodes
zxmhc10a07t8.pdf

ZXMHC10A07T8COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGESUMMARYN-Channel = V(BR)DSS = 100V : RDS(on) = 0.7 ; ID = 1.4AP-Channel = V(BR)DSS = -100V : RDS(on) = 1.0 ; ID = -1.3ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficie

9.1. Size:267K diodes
zxmhc3a01t8.pdf

ZXMHC3A01T8COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGESUMMARYN-Channel = V(BR)DSS= 30V : RDS(on)= 0.12 ; ID= 3.1AP-Channel = V(BR)DSS= -30V : RDS(on)= 0.21 ; ID= -2.3ADESCRIPTIONThis new generation of trench MOSFETs from Zetexutilizes a unique structure that combines the benefits oflow on-resistance with fast switching speed. Thismakes them ideal for high efficiency, lo

9.2. Size:721K diodes
zxmhc3a01n8.pdf

A Product Line ofDiodes Incorporated ZXMHC3A01N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary ID Device V(BR)DSS QG RDS(on) TA= 25C 125m @ VGS= 10V 2.7A N-CH 30V 3.9nC180m @ VGS= 4.5V 2.2A 210m @ VGS= -10V -2.1A P-CH -30V 5.2nC330m @ VGS= -4.5V -1.6A P1S/P2S Description This new generation complementary MOSFET H-Bridge features l

9.3. Size:732K diodes
zxmhc3f381n8.pdf

A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary ID Device V(BR)DSS QG RDS(on) TA= 25C 33m @ VGS= 10V 5.0A N-CH 30V 9.0nC60m @ VGS= 4.5V 3.9A 55m @ VGS= -10V -4.1A P-CH -30V 12.7nC80m @ VGS= -4.5V -3.3A P1S/P2S Description This new generation complementary MOSFET H-Bridge features lo

9.4. Size:277K diodes
zxmhc6a07t8.pdf

ZXMHC6A07T8COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGESUMMARYN-Channel V(BR)DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8AP-Channel V(BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low

9.5. Size:732K diodes
zxmhc6a07n8.pdf

A Product Line of Diodes Incorporated ZXMHC6A07N8 60V SO8 Complementary enhancement mode MOSFET H-Bridge Summary ID Device V(BR)DSS QG RDS(on) TA= 25C 0.25 @ VGS= 10V 1.8A N-CH 60V 3.2nC0.35 @ VGS= 4.5V 1.5A 0.40 @ VGS= -10V -1.4A P-CH -60V 5.1nC0.60 @ VGS= -4.5V -1.2A P1S/P2S Description This new generation complementary MOSFET H-Bridge features

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