2SJ652 Todos los transistores

 

2SJ652 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SJ652
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 28 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm
   Paquete / Cubierta: TO220ML
     - Selección de transistores por parámetros

 

2SJ652 Datasheet (PDF)

 ..1. Size:47K  sanyo
2sj652.pdf pdf_icon

2SJ652

Ordering number : ENN76252SJ652P-Channl Silicon MOSFET2SJ652General-Purpose Switching Device ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2063A 4V drive.[2SJ652] Motor drive, DC / DC converter.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : SourceSpecifications2.

 ..2. Size:255K  onsemi
2sj652.pdf pdf_icon

2SJ652

Ordering number : EN7625A2SJ652P-Channel Power MOSFEThttp://onsemi.com 60V, 28A, 38m , TO-220F-3SGFeatures ON-resistance RDS(on)1=28.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Source Voltage VGSS 20

 0.1. Size:217K  sanyo
2sj652-1e.pdf pdf_icon

2SJ652

2SJ652Ordering number : EN7625ASANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ652ApplicationsFeatures ON-resistance RDS(on)1=28.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 V

 9.1. Size:33K  sanyo
2sj650.pdf pdf_icon

2SJ652

Ordering number : ENN75002SJ650P-Channl Silicon MOSFET2SJ650DC / DC Converter ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2063A 4V drive.[2SJ650]4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : SourceSpecifications2.55 2.55SANYO : TO-220MLAbsolute Maximum Ratings

Otros transistores... ZXMHC3A01T8 , ZXMHC3F381N8 , ZXMHC6A07N8 , ZXMHC6A07T8 , ZXMHN6A07T8 , 2SK3115B , STU437S , STU435S , AON7403 , 2SJ656 , 2SK2394 , 2SK3557 , 2SK3666 , 2SK3703 , 2SK3704 , 2SK3708 , 2SK3745LS .

History: IXTP50N28T | 3SK249

 

 
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