2SK3704 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number : ENN7806A 2SK3704N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3704ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS

isc N-Channel MOSFET Transistor 2SK3704FEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 14m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Ordering number : ENN7766 2SK3706N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3706ApplicationsFeatures Low ON-resistance. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 100 VGate-to-Source Voltage

Ordering number : ENN7705 2SK3705N-Channl Silicon MOSFETGeneral-Purpose Switching Device2SK3705ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

2SK370 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK370 For Low Noise Audio Amplifier Applications Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. High |Yfs|: |Yfs| = 22 ms (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) High breakdown voltage: VGDS = -40 V High input impedance: IGSS = -1 nA (max) (VGS = -30 V)

2SK3700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) 2SK3700 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement model: Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Ab

Ordering number : ENN75022SK3702N-Channel Silicon MOSFET2SK3702DC / DC Converter ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2063A 4V drive.[2SK3702]4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : SourceSpecifications2.55 2.55SANYO : TO-220MLAbsolute Maximum Rati

Ordering number : ENN8023 2SK3709N-Channel Silicon MOSFET2SK3709 General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 100 VGate-to-Source Voltage V

Ordering number : ENN7706 2SK3707N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3707ApplicationsFeatures Low ON-resistance. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 100 VGate-to-Source Voltage

Ordering number : EN7681A 2SK3703SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3703ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings

Ordering number : ENN7707 2SK3708N-Channel Silicon MOSFETGeneral-Purpose2SK3708Switching Device ApplicationsFeatures Low ON-resistance. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 100 VGate-to-Source Voltage

Ordering number : EN7681B2SK3703N-Channel Power MOSFEThttp://onsemi.com60V, 30A, 26m , TO-220F-3SGFeatures ON-resistance RDS(on)1=20m (typ.) Input capacitance Ciss=1780pF (typ.) 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 20 VDrain C

isc N-Channel MOSFET Transistor 2SK3702FEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 55m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3709FEATURESDrain Current : I = 37A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3706FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 130m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK3707FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3703FEATURESDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 26m(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch-Mode and Resonant-Mode Power SuppliesDC-DC ConvertersAC and DC Motor Dri

iscN-Channel MOSFET Transistor 2SK3700FEATURESLow drain-source on-resistance:RDS(ON) = 2.5 (MAX)Enhancement mode:Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

isc N-Channel MOSFET Transistor 2SK3708FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 33m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3705FEATURESDrain Current : I = 60A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 12.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno