2SK802 Todos los transistores

 

2SK802 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK802

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 15 W

Tensión drenaje-fuente (Vds): 30 V

Corriente continua de drenaje (Id): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.5 Ohm

Empaquetado / Estuche: MP5

Búsqueda de reemplazo de MOSFET 2SK802

 

2SK802 Datasheet (PDF)

5.1. 2sk807.pdf Size:141K _update

2SK802
2SK802

查询"2SK807"供应商 查询"2SK807"供应商

5.2. 2sk801.pdf Size:154K _nec

2SK802
2SK802

 5.3. 2sk800.pdf Size:146K _nec

2SK802
2SK802

5.4. 2sk806.pdf Size:61K _panasonic

2SK802

 5.5. 2sk809.pdf Size:66K _panasonic

2SK802

5.6. 2sk808.pdf Size:208K _no

2SK802
2SK802

5.7. 2sk805.pdf Size:82K _no

2SK802
2SK802

5.8. 2sk807.pdf Size:197K _inchange_semiconductor

2SK802
2SK802

isc N-Channel MOSFET Transistor 2SK807 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V =600V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.9. 2sk803.pdf Size:199K _inchange_semiconductor

2SK802
2SK802

isc N-Channel MOSFET Transistor 2SK803 DESCRIPTION ·Drain Current –I =8A@ T =25℃ D C ·Drain Source Voltage- : V =160V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 160 V DSS GS V Gate-Source

5.10. 2sk804.pdf Size:195K _inchange_semiconductor

2SK802
2SK802

isc N-Channel MOSFET Transistor 2SK804 DESCRIPTION ·Drain Current –I =20A@ T =25℃ D C ·Drain Source Voltage- : V =150V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 150

5.11. 2sk806.pdf Size:201K _inchange_semiconductor

2SK802
2SK802

isc N-Channel MOSFET Transistor 2SK806 DESCRIPTION ·Drain Current –I =3A@ T =25℃ D C ·Drain Source Voltage- : V =600V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.12. 2sk809a.pdf Size:197K _inchange_semiconductor

2SK802
2SK802

isc N-Channel MOSFET Transistor 2SK809A DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V =900V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.13. 2sk808a.pdf Size:201K _inchange_semiconductor

2SK802
2SK802

isc N-Channel MOSFET Transistor 2SK808A DESCRIPTION ·Drain Current –I =1A@ T =25℃ D C ·Drain Source Voltage- : V =900V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.14. 2sk808.pdf Size:201K _inchange_semiconductor

2SK802
2SK802

isc N-Channel MOSFET Transistor 2SK808 DESCRIPTION ·Drain Current –I =1A@ T =25℃ D C ·Drain Source Voltage- : V =800V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.15. 2sk809.pdf Size:197K _inchange_semiconductor

2SK802
2SK802

isc N-Channel MOSFET Transistor 2SK809 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V =800V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.16. 2sk805.pdf Size:197K _inchange_semiconductor

2SK802
2SK802

isc N-Channel MOSFET Transistor 2SK805 DESCRIPTION ·Drain Current –I =20A@ T =25℃ D C ·Drain Source Voltage- : V =200V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM

Otros transistores... 2SK702 , 2SK703 , 2SK705 , 2SK724 , 2SK738 , 2SK739 , 2SK799 , 2SK801 , 2N7002 , 2SK814 , 2SK875 , 2SK876 , 2SK897 , 2SK897-MR , 2SK899 , 2SK900 , 2SK901 .

 

 
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