2SK802 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK802 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK802

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm

Encapsulados: TO126

Búsqueda de reemplazo de 2SK802 MOSFET

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2SK802 datasheet

..1. Size:162K 1
2sk802.pdf pdf_icon

9.1. Size:154K nec
2sk801.pdf pdf_icon

9.2. Size:146K nec
2sk800.pdf pdf_icon

9.3. Size:141K panasonic
2sk807.pdf pdf_icon

"2SK807" "2SK807"

9.4. Size:61K panasonic
2sk806.pdf pdf_icon

9.5. Size:66K panasonic
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9.6. Size:82K no
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9.7. Size:208K no
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9.8. Size:183K lrc
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LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 310 mAmps, 60 Volts L2SK801LT1G N Channel SOT 23 3 Pb-Free Package is Available. 1 2 CASE 318, STYLE 21 MAXIMUM RATINGS SOT 23 (TO 236AB) Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain Gate Voltage (RGS = 1.0 M ) VDGR 60 Vdc 310 mAMPS Drain Current 60 VOLTS Continuous TC = 25 C (Note 1.) ID 3

9.9. Size:197K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK805 DESCRIPTION Drain Current I =20A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM

9.10. Size:197K inchange semiconductor
2sk809a.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK809A DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

9.11. Size:197K inchange semiconductor
2sk807.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK807 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

9.12. Size:201K inchange semiconductor
2sk808a.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK808A DESCRIPTION Drain Current I =1A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

9.13. Size:201K inchange semiconductor
2sk806.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK806 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

9.14. Size:199K inchange semiconductor
2sk803.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK803 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V =160V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 160 V DSS GS V Gate-Source

9.15. Size:201K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK808 DESCRIPTION Drain Current I =1A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

9.16. Size:195K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK804 DESCRIPTION Drain Current I =20A@ T =25 D C Drain Source Voltage- V =150V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 150

9.17. Size:197K inchange semiconductor
2sk809.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK809 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

Otros transistores... 2SK702 , 2SK703 , 2SK705 , 2SK724 , 2SK738 , 2SK739 , 2SK799 , 2SK801 , IRFB3607 , 2SK814 , 2SK875 , 2SK876 , 2SK897 , 2SK897-MR , 2SK899 , 2SK900 , 2SK901 .