2SK4065 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK4065

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 90 W

Tensión drenaje-fuente (Vds): 75 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 100 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 220 nC

Resistencia drenaje-fuente RDS(on): 0.006 Ohm

Empaquetado / Estuche: SMP

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2SK4065 Datasheet (PDF)

1.1. 2sk4065-dl-1e.pdf Size:264K _update

2SK4065 Ordering number : ENA0324A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4065 Applications Features • ON-resistance RDS(on)1=4.6m (typ.) • Input capacitance Ciss=12200pF (typ.) Ω • 4V drive Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 75

1.2. 2sk4065.pdf Size:258K _sanyo

Ordering number : ENA0324 2SK4065 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4065 Applications Features � Ultralow ON-resistance. � Load switching applications. � Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25�C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 75 V Gate-to-Source

4.1. 2sk4069-s27-zk.pdf Size:294K _update

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. 2sk4066-dl-1e.pdf Size:285K _update

Ordering number : ENA0225C 2SK4066 N-Channel Power MOSFET http://onsemi.com Ω 60V, 100A, 4.7m , TO-262-3L/TO-263-2L Features • ON-resistance RDS(on)1=3.6m (typ.) • Input capacitance Ciss=12500pF (typ.) Ω • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±

4.3. 2sk4066-dl-e.pdf Size:52K _update

Ordering number : ENA0225A 2SK4066 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4066 Applications Features • Low ON-resistance. • Load switching applications. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-

4.4. 2sk4066-1e.pdf Size:285K _update

4.5. 2sk4066.pdf Size:377K _sanyo

2SK4066 Ordering number : ENA0225B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4066 Applications Features � ON-resistance RDS(on)1=3.6m (typ.) � Input capacitance Ciss=12500pF (typ.) ? � 4V drive Specifications at Ta=25�C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-

Otros transistores... 2SK3746 , 2SK3747 , 2SK3748 , 2SK3796 , 2SK3816 , 2SK3817 , 2SK3820 , 2SK4043LS , 2SK105 , 2SK4066 , 2SK4085LS , 2SK4087LS , 2SK4088LS , 2SK4089LS , 2SK4099LS , 2SK4116LS , 2SK4117LS .

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