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2SK4066 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK4066

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 90 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 100 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 220 nC

Resistencia drenaje-fuente RDS(on): 0.0047 Ohm

Empaquetado / Estuche: TO262, TO263

Búsqueda de reemplazo de MOSFET 2SK4066

 

2SK4066 Datasheet (PDF)

1.1. 2sk4066-dl-1e.pdf Size:285K _update

2SK4066
2SK4066

Ordering number : ENA0225C 2SK4066 N-Channel Power MOSFET http://onsemi.com Ω 60V, 100A, 4.7m , TO-262-3L/TO-263-2L Features • ON-resistance RDS(on)1=3.6m (typ.) • Input capacitance Ciss=12500pF (typ.) Ω • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±

1.2. 2sk4066-dl-e.pdf Size:52K _update

2SK4066
2SK4066

Ordering number : ENA0225A 2SK4066 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4066 Applications Features • Low ON-resistance. • Load switching applications. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-

 1.3. 2sk4066-1e.pdf Size:285K _update

2SK4066
2SK4066

Ordering number : ENA0225C 2SK4066 N-Channel Power MOSFET http://onsemi.com Ω 60V, 100A, 4.7m , TO-262-3L/TO-263-2L Features • ON-resistance RDS(on)1=3.6m (typ.) • Input capacitance Ciss=12500pF (typ.) Ω • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±

1.4. 2sk4066.pdf Size:377K _sanyo

2SK4066
2SK4066

2SK4066 Ordering number : ENA0225B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4066 Applications Features • ON-resistance RDS(on)1=3.6m (typ.) • Input capacitance Ciss=12500pF (typ.) Ω • 4V drive Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60

 1.5. 2sk4066-dl-e.pdf Size:52K _sanyo

2SK4066
2SK4066

Ordering number : ENA0225A 2SK4066 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4066 Applications Features • Low ON-resistance. • Load switching applications. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-

1.6. 2sk4066-1e 2sk4066-dl-1e.pdf Size:285K _onsemi

2SK4066
2SK4066

Ordering number : ENA0225C 2SK4066 N-Channel Power MOSFET http://onsemi.com Ω 60V, 100A, 4.7m , TO-262-3L/TO-263-2L Features • ON-resistance RDS(on)1=3.6m (typ.) • Input capacitance Ciss=12500pF (typ.) Ω • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±

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