2SK4089LS Todos los transistores

 

2SK4089LS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK4089LS
   Código: K4089
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 3 V
   Qgⓘ - Carga de la puerta: 45.4 nC
   trⓘ - Tiempo de subida: 66 nS
   Cossⓘ - Capacitancia de salida: 208 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.72 Ohm
   Paquete / Cubierta: TO220FI

 Búsqueda de reemplazo de MOSFET 2SK4089LS

 

2SK4089LS Datasheet (PDF)

 ..1. Size:67K  sanyo
2sk4089ls.pdf

2SK4089LS 2SK4089LS

Ordering number : ENA0557A 2SK4089LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4089LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specificatio

 ..2. Size:280K  inchange semiconductor
2sk4089ls.pdf

2SK4089LS 2SK4089LS

isc N-Channel MOSFET Transistor 2SK4089LSFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.72(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 8.1. Size:64K  1
2sk4086ls.pdf

2SK4089LS 2SK4089LS

Ordering number : ENA0554D 2SK4086LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4086LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specificatio

 8.2. Size:233K  1
2sk4081.pdf

2SK4089LS 2SK4089LS

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK4081SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4081 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES Low on-state resistance RDS(on) = 5 MAX. (VGS = 10 V, ID = 1.0 A)

 8.3. Size:67K  sanyo
2sk4087ls.pdf

2SK4089LS 2SK4089LS

Ordering number : ENA0555B 2SK4087LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4087LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specificatio

 8.4. Size:67K  sanyo
2sk4088ls.pdf

2SK4089LS 2SK4089LS

Ordering number : ENA0556B 2SK4088LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4088LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specificatio

 8.5. Size:66K  sanyo
2sk4085ls.pdf

2SK4089LS 2SK4089LS

Ordering number : ENA0553B 2SK4085LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4085LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specificatio

 8.6. Size:54K  sanyo
2sk4084ls.pdf

2SK4089LS 2SK4089LS

Ordering number : ENA0552B 2SK4084LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4084LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specificatio

 8.7. Size:290K  renesas
2sk4082-s17.pdf

2SK4089LS 2SK4089LS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.8. Size:256K  renesas
2sk4080-s27-zk.pdf

2SK4089LS 2SK4089LS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.9. Size:280K  inchange semiconductor
2sk4087ls.pdf

2SK4089LS 2SK4089LS

isc N-Channel MOSFET Transistor 2SK4087LSFEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.61(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 8.10. Size:287K  inchange semiconductor
2sk4081d.pdf

2SK4089LS 2SK4089LS

isc N-Channel MOSFET Transistor 2SK4081DFEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 5.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 8.11. Size:280K  inchange semiconductor
2sk4088ls.pdf

2SK4089LS 2SK4089LS

isc N-Channel MOSFET Transistor 2SK4088LSFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 8.12. Size:355K  inchange semiconductor
2sk4081i.pdf

2SK4089LS 2SK4089LS

isc N-Channel MOSFET Transistor 2SK4081IFEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 5.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 8.13. Size:280K  inchange semiconductor
2sk4082.pdf

2SK4089LS 2SK4089LS

isc N-Channel MOSFET Transistor 2SK4082FEATURESDrain Current : I = 3.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.14. Size:355K  inchange semiconductor
2sk4080.pdf

2SK4089LS 2SK4089LS

isc N-Channel MOSFET Transistor 2SK4080FEATURESDrain Current : I = 53A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 90m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.15. Size:280K  inchange semiconductor
2sk4086ls.pdf

2SK4089LS 2SK4089LS

isc N-Channel MOSFET Transistor 2SK4086LSFEATURESDrain Current : I = 11.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 8.16. Size:279K  inchange semiconductor
2sk4085ls.pdf

2SK4089LS 2SK4089LS

isc N-Channel MOSFET Transistor 2SK4085LSFEATURESDrain Current : I = 16A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.43(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 8.17. Size:279K  inchange semiconductor
2sk4084ls.pdf

2SK4089LS 2SK4089LS

isc N-Channel MOSFET Transistor 2SK4084LSFEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.52(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

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