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2SK4117LS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK4117LS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 35 W

Tensión drenaje-fuente (Vds): 400 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 30.6 nC

Resistencia drenaje-fuente RDS(on): 0.32 Ohm

Empaquetado / Estuche: TO220FI

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2SK4117LS Datasheet (PDF)

1.1. 2sk4117ls.pdf Size:270K _sanyo

2SK4117LS
2SK4117LS

Ordering number : ENA0791A 2SK4117LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4117LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute

4.1. 2sk4118ls.pdf Size:52K _upd-mosfet

2SK4117LS
2SK4117LS

Ordering number : ENA0829 2SK4118LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4118LS Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee. Specifications

4.2. 2sk4111.pdf Size:240K _toshiba

2SK4117LS
2SK4117LS

2SK4111 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4111 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu

 4.3. 2sk4112.pdf Size:210K _toshiba

2SK4117LS
2SK4117LS

2SK4112 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4112 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) • High forward transfer admittance: |Yfs| = 5.5S (typ.) • Low leakage current: IDSS = 100μA (VDS = 600 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

4.4. 2sk4115 100129.pdf Size:343K _toshiba

2SK4117LS
2SK4117LS

2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?- MOS?) 2SK4115 Switching Regulator Applications Unit: mm Ф3.2±0.2 15.9max. • Low drain-source ON-resistance: RDS (ON) = 1.6 ? (typ.) • High forward transfer admittance: ?Yfs? = 5.0 S (typ.) • Low leakage current: IDSS = 100 ?A (max) (VDS = 720 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10

 4.5. 2sk4113.pdf Size:210K _toshiba

2SK4117LS
2SK4117LS

2SK4113 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK4113 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 720 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

4.6. 2sk4110.pdf Size:202K _toshiba

2SK4117LS
2SK4117LS

2SK4110 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4110 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Ma

4.7. 2sk4114.pdf Size:162K _toshiba

2SK4117LS
2SK4117LS

2SK4114 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) 2SK4114 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) • High forward transfer admittance: |Yfs| = 3.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement model: Vth = 4.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Abso

4.8. 2sk4116ls.pdf Size:270K _sanyo

2SK4117LS
2SK4117LS

Ordering number : ENA0790A 2SK4116LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4116LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute

Otros transistores... 2SK4065 , 2SK4066 , 2SK4085LS , 2SK4087LS , 2SK4088LS , 2SK4089LS , 2SK4099LS , 2SK4116LS , 2SK1058 , 2SK4124 , 2SK4125 , 2SK4126 , 2SK4177 , 2SK4196LS , 2SK4197LS , 2SK4198LS , 2SK4209 .

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