2SK932 Todos los transistores

 

2SK932 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK932
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.05 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 40 Ohm
   Paquete / Cubierta: CP
     - Selección de transistores por parámetros

 

2SK932 Datasheet (PDF)

 ..1. Size:91K  sanyo
2sk932.pdf pdf_icon

2SK932

Ordering number:EN2841N-Channel Junction Silicon FET2SK932High-FrequencyLow-Noise Amplifier ApplicationsApplications Package Dimensions AM tuner RF amplifier, low-noise amplifier. unit:mm2050AFeatures [2SK932] Adoption of FBET process.0.40.16 Large yfs .3 Small Ciss.0 to 0.1 Ultralow noise figure. Ultrasmall-sized package permitting 2SK

 ..2. Size:1048K  onsemi
2sk932.pdf pdf_icon

2SK932

Ordering number : EN2841B2SK932N-Channel JFEThttp://onsemi.com15V, 7.3 to 24mA, 50mS, CPApplications AM tuner RF amplifier, low-noise amplifierFeatures Adoption of FBET process Large yfs | | Small Ciss Ultralow noise figure Ultrasmall-sized package permitting 2SK932-applied sets to be made smaller and slimmerSpecificationsAbsolute Maximum Ratings

 9.1. Size:79K  sanyo
2sk937.pdf pdf_icon

2SK932

Ordering number:EN3006N-Channel Junction Silicon FET2SK937High-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm Large yfs .2019B Small Ciss.[2SK937]5.04.04.00.450.50.440.451 : Source2 : Gate3 : Drain1 2 3JEDEC : TO-92EIAJ : SC-431.3 1.3SANYO : NPSpecificationsAbsolu

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History: SVT042R5NL5TR | IRF3707 | HFP830 | UF830KG-TN3-R | SSA50R100S | IRFR48ZPBF | MTM25N10

 

 
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