3LN01M Todos los transistores

 

3LN01M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 3LN01M

Código: YA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.15 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1.3 V

Resistencia drenaje-fuente RDS(on): 2.9 Ohm

Empaquetado / Estuche: MCP

Búsqueda de reemplazo de MOSFET 3LN01M

 

3LN01M Datasheet (PDF)

1.1. 3ln01m.pdf Size:47K _sanyo

3LN01M
3LN01M

Ordering number : EN6138A 3LN01M SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 3LN01M Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 10 V Drain C

5.1. 3ln01sp.pdf Size:27K _sanyo

3LN01M
3LN01M

Ordering number : ENN6545 3LN01SP N-Channel Silicon MOSFET 3LN01SP Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2180 2.5V drive. [3LN01SP] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 : Source 2 : Drain 3 : Gate Specifications 3.0 3.8nom SANYO : SPA Absolute Maximum Ratings at Ta=25C Parameter

5.2. 3ln01n.pdf Size:27K _sanyo

3LN01M
3LN01M

Ordering number : ENN6544 3LN01N N-Channel Silicon MOSFET 3LN01N Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2178 2.5V drive. [3LN01N] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 : Source 2 : Drain 3 : Gate Specifications 1.3 1.3 SANYO : NP Absolute Maximum Ratings at Ta=25C Parameter Symbol Co

 5.3. 3ln01c.pdf Size:250K _sanyo

3LN01M
3LN01M

Ordering number : EN6260A 3LN01C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 3LN01C Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 10 V Drain C

5.4. 3ln01s.pdf Size:48K _sanyo

3LN01M
3LN01M

Ordering number : EN6957A 3LN01S SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 3LN01S Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 10 V Drain C

 5.5. 3ln01ss.pdf Size:260K _sanyo

3LN01M
3LN01M

Ordering number : EN6546A 3LN01SS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 3LN01SS Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 10 V Drain

Otros transistores... 2SK4197LS , 2SK4198LS , 2SK4209 , 2SK4210 , 2SK4221 , 2SK4222 , 2SK932 , 3LN01C , IRFP460 , 3LN01S , 3LP01C , 3LP01M , 3LP01S , 5LN01C , 5LN01M , 5LN01SP , 5LN01SS .

 

 
Back to Top

 


3LN01M
  3LN01M
  3LN01M
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: UPA2700GR | UPA2680T1E | UPA2672T1R | UPA2670T1R | UPA2650T1E | UPA2593T1H | UPA2592T1H | UPA2591T1H | UPA2590T1H | UPA2562T1H | UPA2561T1H | UPA2560T1H | UPA2560 | UPA2550T1H | UPA2550 |

 

 

 
Back to Top