3LN01M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3LN01M
Código: YA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 0.15 W
Tensión drenaje-fuente (Vds): 30 V
Tensión compuerta-fuente (Vgs): 10 V
Corriente continua de drenaje (Id): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 1.3 V
Resistencia drenaje-fuente RDS(on): 2.9 Ohm
Empaquetado / Estuche: MCP
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3LN01M Datasheet (PDF)
1.1. 3ln01m.pdf 
Size:47K _sanyo
Ordering number : EN6138A 3LN01M SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 3LN01M Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 10 V Drain C
5.1. 3ln01sp.pdf Size:27K _sanyo
Ordering number : ENN6545 3LN01SP N-Channel Silicon MOSFET 3LN01SP Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2180 2.5V drive. [3LN01SP] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 : Source 2 : Drain 3 : Gate Specifications 3.0 3.8nom SANYO : SPA Absolute Maximum Ratings at Ta=25C Parameter
5.2. 3ln01n.pdf Size:27K _sanyo
Ordering number : ENN6544 3LN01N N-Channel Silicon MOSFET 3LN01N Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2178 2.5V drive. [3LN01N] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 : Source 2 : Drain 3 : Gate Specifications 1.3 1.3 SANYO : NP Absolute Maximum Ratings at Ta=25C Parameter Symbol Co
5.3. 3ln01c.pdf Size:250K _sanyo
Ordering number : EN6260A 3LN01C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 3LN01C Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 10 V Drain C
5.4. 3ln01s.pdf Size:48K _sanyo
Ordering number : EN6957A 3LN01S SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 3LN01S Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 10 V Drain C
5.5. 3ln01ss.pdf Size:260K _sanyo
Ordering number : EN6546A 3LN01SS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 3LN01SS Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 10 V Drain
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