3LP01M Todos los transistores

 

3LP01M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 3LP01M

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.15 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 8 Ohm

Empaquetado / Estuche: MCP

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3LP01M Datasheet (PDF)

1.1. 3lp01m.pdf Size:265K _sanyo

3LP01M
3LP01M

Ordering number : EN6139B 3LP01M SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 3LP01M Applications Features Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 10 V Drain Curr

5.1. 3lp01c.pdf Size:259K _sanyo

3LP01M
3LP01M

Ordering number : EN6645B 3LP01C SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 3LP01C Applications Features Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 10 V Drain Curr

5.2. 3lp01n.pdf Size:28K _sanyo

3LP01M
3LP01M

Ordering number : ENN6646 3LP01N P-Channel Silicon MOSFET 3LP01N Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2178 2.5V drive. 5.0 [3LP01N] 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 : Source 2 : Drain 3 : Gate Specifications 1.3 1.3 SANYO : NP Absolute Maximum Ratings at Ta=25C Parameter Symbol Co

 5.3. 3lp01ss.pdf Size:250K _sanyo

3LP01M
3LP01M

Ordering number : EN6648A 3LP01SS SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 3LP01SS Applications Features Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 10 V Drain Cu

5.4. 3lp01sp.pdf Size:28K _sanyo

3LP01M
3LP01M

Ordering number : ENN6647 3LP01SP P-Channel Silicon MOSFET 3LP01SP Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2180 2.5V drive. [3LP01SP] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 : Source 2 : Drain 3 : Gate Specifications 3.0 3.8nom SANYO : SPA Absolute Maximum Ratings at Ta=25C Parameter S

 5.5. 3lp01s.pdf Size:48K _sanyo

3LP01M
3LP01M

Ordering number : EN6681A 3LP01S SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 3LP01S Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 10 V Drain

5.6. mtp3lp01y3.pdf Size:331K _cystek

3LP01M
3LP01M

Spec. No. : 794Y3 Issued Date : 2011.12.22 CYStech Electronics Corp. Revised Date : Page No. : 1/ 8 30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30V ID -230mA MTP3LP01Y3 3Ω@-4V 4.6Ω@-2.5V RDSON(typ) 10.9Ω@-1.5V Features • Ultra high speed switching. • Low gate charge. • 2.5V drive. • Pb-free package lead plating and halogen-free package. Equiva

5.7. mtp3lp01n3.pdf Size:317K _cystek

3LP01M
3LP01M

Spec. No. : 794N3 Issued Date : 2010.06.17 CYStech Electronics Corp. Revised Date : 2014.01.17 Page No. : 1/ 9 30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30V ID -230mA MTP3LP01N3 3Ω@-4V 4.6Ω@-2.5V RDSON(typ) 10.9Ω@-1.5V Features • Ultra high speed switching. • Low gate charge. • 2.5V drive. • Pb-free lead plating and halogen-free package. Equ

5.8. mtp3lp01s3.pdf Size:310K _cystek

3LP01M
3LP01M

Spec. No. : 794N3 Issued Date : 2011.03.14 CYStech Electronics Corp. Revised Date : 2013.09.09 Page No. : 1/ 9 30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30V ID -230mA MTP3LP01S3 3Ω@-4V 4.6Ω@-2.5V RDSON(typ) 10.9Ω@-1.5V Features • Ultra high speed switching. • Low gate charge. • 2.5V drive. • Pb-free package. Equivalent Circuit Outline MTP3

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