3LP01M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

..1. Size:265K sanyo
3lp01m.pdf pdf_icon

Ordering number : EN6139B3LP01MSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device3LP01MApplicationsFeatures Low ON-resistance. High-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 10 V

9.1. Size:250K sanyo
3lp01ss.pdf pdf_icon

Ordering number : EN6648A3LP01SSSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device3LP01SSApplicationsFeatures Low ON-resistance. High-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 10

9.2. Size:28K sanyo
3lp01n.pdf pdf_icon

Ordering number : ENN66463LP01NP-Channel Silicon MOSFET3LP01NUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2178 2.5V drive.5.0[3LP01N]4.04.00.450.50.440.451 2 31 : Source2 : Drain3 : GateSpecifications1.3 1.3 SANYO : NPAbsolute Maximum Ratings at Ta=25CParameter

9.3. Size:28K sanyo
3lp01sp.pdf pdf_icon

Ordering number : ENN66473LP01SPP-Channel Silicon MOSFET3LP01SPUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2180 2.5V drive.[3LP01SP]2.24.00.40.50.40.41 2 31.3 1.31 : Source2 : Drain3 : GateSpecifications 3.03.8nom SANYO : SPAAbsolute Maximum Ratings at Ta=25CP

9.4. Size:48K sanyo
3lp01s.pdf pdf_icon

Ordering number : EN6681A3LP01SSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device3LP01SApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS

9.5. Size:259K sanyo
3lp01c.pdf pdf_icon

Ordering number : EN6645B3LP01CSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device3LP01CApplicationsFeatures Low ON-resistance. High-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 10 V

9.6. Size:310K cystek
mtp3lp01s3.pdf pdf_icon

Spec. No. : 794N3 Issued Date : 2011.03.14 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/ 9 30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30V ID -230mA MTP3LP01S3 3@-4V 4.6@-2.5V RDSON(typ) 10.9@-1.5V Features Ultra high speed switching. Low gate charge. 2.5V drive. Pb-free package. Equivalent Circuit Outline MTP3

9.7. Size:317K cystek
mtp3lp01n3.pdf pdf_icon

Spec. No. : 794N3 Issued Date : 2010.06.17 CYStech Electronics Corp.Revised Date : 2014.01.17 Page No. : 1/ 9 30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30V ID -230mA MTP3LP01N3 3@-4V 4.6@-2.5V RDSON(typ) 10.9@-1.5V Features Ultra high speed switching. Low gate charge. 2.5V drive. Pb-free lead plating and halogen-free package. Equ

9.8. Size:331K cystek
mtp3lp01y3.pdf pdf_icon

Spec. No. : 794Y3 Issued Date : 2011.12.22 CYStech Electronics Corp.Revised Date : Page No. : 1/ 8 30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30V ID -230mA MTP3LP01Y3 3@-4V 4.6@-2.5V RDSON(typ) 10.9@-1.5V Features Ultra high speed switching. Low gate charge. 2.5V drive. Pb-free package lead plating and halogen-free package. Equiva

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