ATP104 Todos los transistores

 

ATP104 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ATP104
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 520 nS
   Cossⓘ - Capacitancia de salida: 880 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0084 Ohm
   Paquete / Cubierta: ATPAK
 

 Búsqueda de reemplazo de ATP104 MOSFET

   - Selección ⓘ de transistores por parámetros

 

ATP104 Datasheet (PDF)

 ..1. Size:268K  sanyo
 atp104.pdf pdf_icon

ATP104

ATP104Ordering number : ENA1406SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP104ApplicationsFeatures Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 9.1. Size:469K  sanyo
 atp107.pdf pdf_icon

ATP104

ATP107Ordering number : ENA1603SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP107ApplicationsFeatures Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 9.2. Size:467K  sanyo
 atp101.pdf pdf_icon

ATP104

ATP101Ordering number : ENA1646SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP101ApplicationsFeatures Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 9.3. Size:469K  sanyo
 atp103.pdf pdf_icon

ATP104

ATP103Ordering number : ENA1623SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP103ApplicationsFeatures Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

MOSTRAR MÁS

Otros transistores... 5LN01C , 5LN01M , 5LN01SP , 5LN01SS , 5LP01M , ATP101 , ATP102 , ATP103 , 2SK3878 , ATP106 , ATP107 , ATP108 , ATP112 , ATP113 , ATP114 , ATP201 , ATP202 .

History: IRF540FI | RSJ400N10 | BF512 | SSW47N60S | TK5P53D

 

 
Back to Top

 


 
.