ATP104 Todos los transistores

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ATP104 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ATP104

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 60 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 75 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.0064 Ohm

Empaquetado / Estuche: ATPAK

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ATP104 Datasheet (PDF)

1.1. atp104.pdf Size:268K _sanyo

ATP104
ATP104

ATP104 Ordering number : ENA1406 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP104 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-

5.1. atp106.pdf Size:470K _sanyo

ATP104
ATP104

ATP106 Ordering number : ENA1597 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP106 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --40 V Gate-

5.2. atp103.pdf Size:469K _sanyo

ATP104
ATP104

ATP103 Ordering number : ENA1623 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP103 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-

5.3. atp108.pdf Size:469K _sanyo

ATP104
ATP104

ATP108 Ordering number : ENA1604 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP108 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --40 V Gate-

5.4. atp107.pdf Size:469K _sanyo

ATP104
ATP104

ATP107 Ordering number : ENA1603 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP107 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --40 V Gate-

5.5. atp102.pdf Size:268K _sanyo

ATP104
ATP104

ATP102 Ordering number : ENA1479 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP102 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-

5.6. atp101.pdf Size:467K _sanyo

ATP104
ATP104

ATP101 Ordering number : ENA1646 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP101 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-

Otros transistores... 5LN01C , 5LN01M , 5LN01SP , 5LN01SS , 5LP01M , ATP101 , ATP102 , ATP103 , IRF830 , ATP106 , ATP107 , ATP108 , ATP112 , ATP113 , ATP114 , ATP201 , ATP202 .

 


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