ATP202 Todos los transistores

 

ATP202 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ATP202
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 185 nS
   Cossⓘ - Capacitancia de salida: 285 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: ATPAK

 Búsqueda de reemplazo de MOSFET ATP202

 

ATP202 Datasheet (PDF)

 ..1. Size:267K  sanyo
atp202.pdf

ATP202
ATP202

ATP202Ordering number : ENA1317SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP202ApplicationsFeatures Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 9.1. Size:268K  sanyo
atp204.pdf

ATP202
ATP202

ATP204Ordering number : ENA1551SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP204ApplicationsFeatures Low ON-resistance. 4.5V drive. Large current. Slim package. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 9.2. Size:445K  sanyo
atp208.pdf

ATP202
ATP202

ATP208Ordering number : ENA1396ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP208ApplicationsFeatures Low ON-resistance Large current 4.5V drive Slim package Halogen free compliance Protection diode inSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrai

 9.3. Size:267K  sanyo
atp203.pdf

ATP202
ATP202

ATP203Ordering number : ENA1318SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP203ApplicationsFeatures Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 9.4. Size:268K  sanyo
atp201.pdf

ATP202
ATP202

ATP201Ordering number : ENA1547SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP201ApplicationsFeatures Low ON-resistance. 4.5V drive. Slim package. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Sourc

 9.5. Size:443K  sanyo
atp207.pdf

ATP202
ATP202

ATP207Ordering number : ENA1319ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP207ApplicationsFeatures Low ON-resistance Large current 4.5V drive Slim package Halogen free compliance Protection diode inSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrai

 9.6. Size:444K  sanyo
atp206.pdf

ATP202
ATP202

ATP206Ordering number : ENA1395ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP206ApplicationsFeatures Low ON-resistance Large current 4.5V drive Slim package Halogen free compliance Protection diode inSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrai

Otros transistores... ATP104 , ATP106 , ATP107 , ATP108 , ATP112 , ATP113 , ATP114 , ATP201 , 12N60 , ATP203 , ATP204 , ATP206 , ATP207 , ATP208 , ATP212 , ATP213 , ATP214 .

 

 
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