ATP208 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ATP208
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 60 W
Tensión drenaje-fuente (Vds): 40 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 90 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Carga de compuerta (Qg): 83 nC
Resistencia drenaje-fuente RDS(on): 0.0046 Ohm
Empaquetado / Estuche: ATPAK
Búsqueda de reemplazo de MOSFET ATP208
ATP208 Datasheet (PDF)
1.1. atp208.pdf 
Size:445K _sanyo
ATP208 Ordering number : ENA1396A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP208 Applications Features • Low ON-resistance • Large current • 4.5V drive • Slim package • Halogen free compliance • Protection diode in Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drai
5.1. atp203.pdf Size:267K _sanyo
ATP203 Ordering number : ENA1318 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP203 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to
5.2. atp204.pdf Size:268K _sanyo
ATP204 Ordering number : ENA1551 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP204 Applications Features Low ON-resistance. 4.5V drive. Large current. Slim package. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to
5.3. atp201.pdf Size:268K _sanyo
ATP201 Ordering number : ENA1547 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP201 Applications Features Low ON-resistance. 4.5V drive. Slim package. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VG
5.4. atp206.pdf Size:444K _sanyo
ATP206 Ordering number : ENA1395A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP206 Applications Features • Low ON-resistance • Large current • 4.5V drive • Slim package • Halogen free compliance • Protection diode in Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drai
5.5. atp202.pdf Size:267K _sanyo
ATP202 Ordering number : ENA1317 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP202 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to
5.6. atp207.pdf Size:443K _sanyo
ATP207 Ordering number : ENA1319A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP207 Applications Features • Low ON-resistance • Large current • 4.5V drive • Slim package • Halogen free compliance • Protection diode in Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drai
Otros transistores... ATP113 , ATP114 , ATP201 , ATP202 , ATP203 , ATP204 , ATP206 , ATP207 , IRF9540 , ATP212 , ATP213 , ATP214 , ATP216 , ATP218 , ATP301 , ATP302 , ATP404 .
