BS107A Todos los transistores

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BS107A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BS107A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.35 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 0.25 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 4.5 Ohm

Empaquetado / Estuche: TO92

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BS107A Datasheet (PDF)

1.1. bs107a cnv 2.pdf Size:49K _philips

BS107A
BS107A

DISCRETE SEMICONDUCTORS DATA SHEET BS107A N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BS107A D-MOS transistor FEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL, Drain-source voltage VDS max. 200 V etc. Gat

1.2. bs107a.pdf Size:94K _onsemi

BS107A
BS107A

BS107A Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features http://onsemi.com AEC Qualified 250 mAMPS, 200 VOLTS PPAP Capable RDS(on) = 6.4 W This is a Pb-Free Device* N-Channel D MAXIMUM RATINGS Rating Symbol Value Unit G Drain -Source Voltage VDS 200 Vdc Gate-Source Voltage - Continuous VGS 20 Vdc S - Non-repetitive (tp ? 50 ms) VGSM 30 Vpk Drain Curre

5.1. bs107rev1.pdf Size:76K _motorola

BS107A
BS107A

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BS107/D TMOS Switching BS107 NChannel Enhancement 1 DRAIN BS107A 2 GATE ? 3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage VDS 200 Vdc 1 2 3 GateSource Voltage Continuous VGS 20 Vdc CASE 2904, STYLE 30 Nonrepetitive (tp ? 50 s) VGSM 30 Vpk TO92 (TO226AA) Drain Current mAdc Con

5.2. bs107 cnv 2.pdf Size:65K _philips

BS107A
BS107A

DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BS107 D-MOS transistor FEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS drain-sour

5.3. tn2404k tn2404kl bs107kl 2.pdf Size:89K _vishay

BS107A
BS107A

5.4. tn2404k tn2404kl bs107kl.pdf Size:70K _vishay

BS107A
BS107A

5.5. bs107p.pdf Size:25K _diodes

BS107A

N-CHANNEL ENHANCEMENT BS107P MODE VERTICAL DMOS FET ISSUE 2 SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=23? D G S REFER TO BS107PT FOR GRAPHS E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25C ID 0.12 A Pulsed Drain Current IDM 2A Gate-Source Voltage VGS 20 V Power Dissipation at Ta

5.6. bs107pt.pdf Size:47K _diodes

BS107A
BS107A

N-CHANNEL ENHANCEMENT PT BS107PT MODE VERTICAL DMOS FET ISSUE 2 SEPT 93 FEATURES * 200 Volt VDS VGS= * RDS(on)=28? 10V 6V D 4V G S E-Line TO92 Compatible 3V ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT 8 10 Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25C ID 0.12 A Pulsed Drain Current IDM 2A Gate-Source Voltage VGS 20 V Power Dissipation

5.7. bs107.pdf Size:86K _infineon

BS107A
BS107A

BS 107 SIPMOS Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...2.0V Pin 1 Pin 2 Pin 3 S G D Type VDS ID RDS(on) Package Marking BS 107 200 V 0.13 A 26 ? TO-92 BS 107 Type Ordering Code Tape and Reel Information BS 107 Q67000-S078 E6288 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 200 V V Drain-gate voltage DGR RGS =

Otros transistores... BBS3002 , BFL4001 , BFL4004 , BFL4007 , BFL4026 , BFL4036 , BFL4037 , BMS4007 , IRF1010E , BSS123L , BSS138L , BSS84L , CPH3348 , CPH3351 , CPH3355 , CPH3448 , CPH3455 .

 


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