2SK901 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK901
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   tonⓘ - Tiempo de encendido: 100 nS
   Cossⓘ - Capacitancia de salida: 350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: TO3P

Búsqueda de reemplazo de MOSFET 2SK901

2SK901 Datasheet (PDF)

..1. Size:135K fuji
2sk901.pdf

..2. Size:285K inchange semiconductor
2sk901.pdf

isc N-Channel MOSFET Transistor 2SK901FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.15(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

9.1. Size:143K 1
2sk903.pdf

Discontinued product.Discontinued product.Discontinued product.

9.2. Size:168K 1
2sk904.pdf

9.3. Size:132K 1
2sk905.pdf

9.4. Size:136K 1
2sk906.pdf

9.5. Size:132K 1
2sk900.pdf

9.6. Size:183K fuji
2sk903mr.pdf

Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloa

9.7. Size:131K fuji
2sk902.pdf

9.8. Size:136K fuji
2sk903-m.pdf

"2SK903M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK903M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK903M"Powered by ICminer.com Electronic-Library Service CopyRight 2003

9.9. Size:286K inchange semiconductor
2sk903-mr.pdf

isc N-Channel MOSFET Transistor 2SK903-MRFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 4(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

9.10. Size:199K inchange semiconductor
2sk904.pdf

isc N-Channel MOSFET Transistor 2SK904DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor co

9.11. Size:203K inchange semiconductor
2sk905.pdf

isc N-Channel MOSFET Transistor 2SK905DESCRIPTIONDrain Current I =45A@ T =25D CDrain Source Voltage-: V =50V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for low voltage.high speed applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltag

9.12. Size:203K inchange semiconductor
2sk906.pdf

isc N-Channel MOSFET Transistor 2SK906DESCRIPTIONDrain Current I =32A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for low voltage.high speed applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Volta

9.13. Size:202K inchange semiconductor
2sk902.pdf

isc N-Channel MOSFET Transistor 2SK902DESCRIPTIONDrain Current I =30A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 250 V

9.14. Size:288K inchange semiconductor
2sk900.pdf

isc N-Channel MOSFET Transistor 2SK900FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Otros transistores... 2SK802 , 2SK814 , 2SK875 , 2SK876 , 2SK897 , 2SK897-MR , 2SK899 , 2SK900 , HY1906P , 2SK902 , 2SK903 , 2SK904 , 2SK905 , 2SK906 , 2SK928 , 2SK929 , 2SK934 .

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