CPH6337 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CPH6337
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 145 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: CPH6

Búsqueda de reemplazo de MOSFET CPH6337

CPH6337 Datasheet (PDF)

..1. Size:265K sanyo
cph6337.pdf

Ordering number : ENA0923 CPH6337SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH6337ApplicationsFeatures Ultrahigh-speed switching. 1.8V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS 10 VDrain Current (DC)

9.1. Size:410K 1
cph6354.pdf

CPH6354Ordering number : ENA1946SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH6354ApplicationsFeatures ON-resistance RDS(on)1=77m (typ.) 4V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VD

9.2. Size:401K sanyo
cph6355.pdf

CPH6355Ordering number : EN8933SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH6355ApplicationsFeatures ON-resistance RDS(on)1=130m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Sour

9.3. Size:29K sanyo
cph6313.pdf

Ordering number : ENN7017CPH6313P-Channel Silicon MOSFETCPH6313High-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm High-speed switching. 2151A 2.5V drive.[CPH6315]0.152.956 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSpecificationsSANYO : CPH6Absolute Maximum Ratings at

9.4. Size:29K sanyo
cph6304.pdf

Ordering number : ENN6917CPH6304P-Channel Silicon MOSFETCPH6304High-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm High-speed switching. 2151A 4V drive.[CPH6304]0.152.96 5 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSpecificationsSANYO : CPH6Absolute Maximum R

9.5. Size:64K sanyo
cph6341.pdf

Ordering number : ENA1084 CPH6341SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH6341ApplicationsFeatures Low ON-resistance. High-speed switching. 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 20 VD

9.6. Size:30K sanyo
cph6319.pdf

Ordering number : ENN7182CPH6319P-Channel Silicon MOSFETCPH6319High-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm High-speed switching. 2151A 1.8V drive.[CPH6319]0.152.96 5 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSpecificationsSANYO : CPH6Absolute Maximum

9.7. Size:48K sanyo
cph6311.pdf

Ordering number : EN6794A CPH6311SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH6311ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS

9.8. Size:315K sanyo
cph6347.pdf

CPH6347Ordering number : ENA1334ASANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH6347ApplicationsFeatures 1.8V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS 12 VDrain Current (DC

9.9. Size:28K sanyo
cph6315.pdf

Ordering number : ENN7018CPH6315P-Channel Silicon MOSFETCPH6315High-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm High-speed switching. 2151A 2.5V drive.[CPH6315]0.152.956 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSpecificationsSANYO : CPH6Absolute Maximum Ratings at

9.10. Size:199K sanyo
cph6302.pdf

Ordering number:EN5939P-Channel MOS Silicon FETCPH6302Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2151 4V drive.[CPH6302]0.152.96 5 40 to 0.11 : Drain1 2 32 : Drain0.953 : Gate4 : Source5 : Drain6 : Drain0.4SANYO : CPH6SpecificationsAbsolute Maximum Ratings at T

9.11. Size:42K sanyo
cph6306.pdf

Ordering number:ENN6348P-Channel Silicon MOSFETCPH6306Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2151A 4V drive.[CPH6306]0.152.96 5 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSANYO : CPH6SpecificationsAbsolute Maximum Ratings at Ta =

9.12. Size:217K sanyo
cph6301.pdf

Ordering number:EN5938P-Channel MOS Silicon FETCPH6301Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2151 2.5V drive.[CPH6301]0.152.96 5 40 to 0.11 : Drain1 2 32 : Drain0.953 : Gate4 : Source5 : Drain6 : Drain0.4SANYO : CPH6SpecificationsAbsolute Maximum Ratings at

9.13. Size:29K sanyo
cph6351.pdf

Ordering number : ENN6936CPH6351P-Channel Silicon MOSFETCPH6351Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2151A 2.5V drive.[CPH6351]0.152.956 40.051 : Drain2 : Drain1 2 33 : Gate0.954 : Source5 : Drain6 : DrainSpecifications0.4 SANYO : CPH6Absolu

9.14. Size:29K sanyo
cph6352.pdf

Ordering number : ENN6937CPH6352P-Channel Silicon MOSFETCPH6352Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2151A 2.5V drive.[CPH6352]0.152.96 5 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSpecificationsSANYO : CPH6Absolu

9.15. Size:287K sanyo
cph6350.pdf

CPH6350Ordering number : ENA1529SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH6350ApplicationsFeatures 4V drive. Low ON-resistance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID --

9.16. Size:41K sanyo
cph6303.pdf

Ordering number:ENN6395AP-Channel Silicon MOSFETCPH6303Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2151A 2.5V drive.[CPH6303]0.152.96 5 40.051 2 31 : Drain0.952 : Drain3 : Gate4 : Source5 : Drain6 : Drain0.4SANYO : CPH6SpecificationsAbsolute Maximum Ratings at T

9.17. Size:29K sanyo
cph6318.pdf

Ordering number : ENN7212CPH6318P-Channel Silicon MOSFETCPH6318High-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm High-speed switching. 2151A 1.8V drive.[CPH6318]0.152.96 5 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSpecificationsSANYO : CPH6Absolute Maximum Ratings at T

9.18. Size:29K sanyo
cph6316.pdf

Ordering number : ENN7026CPH6316P-Channel Silicon MOSFETCPH6316High-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm High-speed switching. 2151A 4V drive.[CPH6316]0.152.956 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSpecificationsSANYO : CPH6Absolute Maximum Ratings at Ta

9.19. Size:30K sanyo
cph6312.pdf

Ordering number : ENN6934CPH6312P-Channel Silicon MOSFETCPH6312High-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm High-speed switching. 2151A 4V drive.[CPH6312]0.152.96 5 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSpecificationsAbsolute Maximum Ratings at Ta=2

9.20. Size:391K onsemi
cph6347.pdf

CPH6347 Power MOSFET www.onsemi.com 20V, 39m, 6A, Single P-ChannelVDSS RDS(on) Max ID MaxFeatures 39m@ -4.5V Low Gate Drive Voltage -20V 66m@ -2.5V -6A ESD Diode-Protected Gate 102m@ -1.8V Pb-Free, Halogen Free and RoHS Compliance Specifications Electrical Connection Absolute Maximum Ratings at Ta = 25C P-Channel Unit Parameter S

9.21. Size:293K onsemi
cph6350.pdf

Ordering number : ENA1529BCPH6350P-Channel Power MOSFEThttp://onsemi.com 30V, 6A, 43m , Single CPH6Features 4V drive Low ON-resistance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain to Source Voltage VDSS --30 VGate to Source Voltage VGSS 20 VDrain Current (DC) ID --6 ADrain

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