2SK903 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK903
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 Vtonⓘ - Tiempo de encendido: 60 nS
Cossⓘ - Capacitancia de salida: 90 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
Paquete / Cubierta: TO220
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2SK903 Datasheet (PDF)
2sk903mr.pdf
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2sk903-m.pdf
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2sk903-mr.pdf
isc N-Channel MOSFET Transistor 2SK903-MRFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 4(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
Otros transistores... 2SK875 , 2SK876 , 2SK897 , 2SK897-MR , 2SK899 , 2SK900 , 2SK901 , 2SK902 , IRFP250 , 2SK904 , 2SK905 , 2SK906 , 2SK928 , 2SK929 , 2SK934 , 2SK935 , 2SK936 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918