ECH8649 Todos los transistores

 ..1. Size:264K  sanyo
 ech8649.pdf

Ordering number ENA0854 ECH8649 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8649 Applications Features Low ON-resistance. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions

 9.1. Size:450K  1
 ech8673.pdf

ECH8673 Ordering number ENA1892 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device ECH8673 Applications Features ON-resistance Nch RDS(on)1=65m (typ.), Pch ON-resistance RDS(on)1=125m (typ.) 4V drive Halogen free compliance Nch+Pch MOSFET Specifications at Ta=25 C Absolute Maximum Ratings Paramet

 9.2. Size:65K  sanyo
 ech8664r.pdf

Ordering number ENA1185 ECH8664R SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8664R Applications Features Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings

 9.3. Size:275K  sanyo
 ech8674.pdf

ECH8674 Ordering number ENA1436 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8674 Applications Features 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --1

 9.4. Size:66K  sanyo
 ech8654.pdf

Ordering number ENA0981 ECH8654 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8654 Applications Features Low ON-resistance. 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS

 9.5. Size:409K  sanyo
 ech8659.pdf

ECH8659 Ordering number ENA1224A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8659 Applications Features 4V drive Composite type, facilitating high-density mounting Halogen free compliance Protection diode in Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-So

 9.6. Size:488K  sanyo
 ech8602m.pdf

ECH8602M Ordering number ENA1562 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8602M Applications Features 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain

 9.7. Size:494K  sanyo
 ech8660.pdf

ECH8660 Ordering number ENA1358B SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device ECH8660 Applications Features The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting 4V drive Halogen free compliance Spe

 9.8. Size:264K  sanyo
 ech8653.pdf

Ordering number ENA0851 ECH8653 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8653 Applications Features Low ON-resistance. 4V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ra

 9.9. Size:63K  sanyo
 ech8651r.pdf

Ordering number ENA1010 ECH8651R SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8651R Applications Features Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings

 9.10. Size:64K  sanyo
 ech8655r.pdf

Ordering number ENA1011 ECH8655R SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8655R Applications Features Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings

 9.11. Size:355K  sanyo
 ech8667.pdf

ECH8667 Ordering number ENA1778 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8667 Applications Features ON-resistance RDS(on)1=30m (typ.) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Sour

 9.12. Size:436K  sanyo
 ech8661.pdf

ECH8661 Ordering number ENA1777 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device ECH8661 Applications Features ON-resistance Nch RDS(on)1=18m (typ.), Pch ON-resistance RDS(on)1=30m (typ.) The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switchi

 9.13. Size:275K  sanyo
 ech8675.pdf

ECH8675 Ordering number ENA1437 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8675 Applications Features 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --2

 9.14. Size:66K  sanyo
 ech8601m.pdf

Ordering number ENA1174 ECH8601M SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8601M Applications Features Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings

 9.15. Size:345K  sanyo
 ech8657.pdf

ECH8657 Ordering number ENA1710A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8657 Applications Features 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID

 9.16. Size:276K  sanyo
 ech8671.pdf

ECH8671 Ordering number ENA1456 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8671 Applications Features 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --1

 9.17. Size:369K  sanyo
 ech8668.pdf

ECH8668 Ordering number ENA1510 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device ECH8668 Applications Features The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting. 1.8V drive. Halogen free compliance.

 9.18. Size:73K  sanyo
 ech8663r.pdf

Ordering number ENA1184 ECH8663R SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8663R Applications Features Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings

 9.19. Size:33K  sanyo
 ech8603.pdf

Ordering number ENN7218 ECH8603 P-Channel Silicon MOSFET ECH8603 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2206 2.5V drive. [ECH8603] Bottom View Side View 0.3 0.15 5 6 7 8 4 3 2 1 0.65 1 Source1 2.9 Top View 2 Gate1 3 Source2 8 7 6 5 4 Gate2 Side View 5 Dr

 9.20. Size:67K  sanyo
 ech8662.pdf

Ordering number ENA1259 ECH8662 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8662 Applications Features Low ON-resistance. 2.5V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS 10

 9.21. Size:276K  sanyo
 ech8672.pdf

ECH8672 Ordering number ENA1465 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8672 Applications Features 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --2

 9.22. Size:68K  sanyo
 ech8652.pdf

Ordering number ENA0935 ECH8652 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8652 Applications Features Low ON-resistance. 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-S

 9.23. Size:382K  sanyo
 ech8656.pdf

ECH8656 Ordering number EN9010 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8656 Applications Features ON-resistance RDS(on)1=13m (typ.) 1.8V drive Halogen free compliance Nch + Nch MOSFET Protection diode in Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit

 9.24. Size:608K  onsemi
 ech8690.pdf

Ordering number ENA2185B ECH8690 Power MOSFET http //onsemi.com 60V, 4.7A, 55m -60V, -3.5A, 94m Complememtary Dual ECH8 Features On-State Resistance Nch RDS(on)1=42m (typ.) Protection diode in Pch RDS(on)1=73m (typ.) 4V drive Halogen free compliance Nch+Pch MOSFET Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condit

 9.25. Size:275K  onsemi
 ech8697r.pdf

Ordering number ENA2243 ECH8697R N-Channel Power MOSFET http //onsemi.com 24V, 10A, 11.6m , Dual ECH8 Common Drain Features Low On-resistance Built-in gate protection resistor 2.5V drive Best suited for LiB charging and discharging switch Common-Drain Type Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at T

 9.26. Size:313K  onsemi
 ech8651r.pdf

Ordering number ENA1010A ECH8651R N-Channel Power MOSFET http //onsemi.com 24V, 10A, 14m , Dual ECH8 Features Low ON-resistance Built-in gate protection resistor 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25 C Parame

 9.27. Size:159K  onsemi
 ech8693r.pdf

Ordering number ENA2208A ECH8693R N-Channel Power MOSFET http //onsemi.com 24V, 14A, 7m , Dual ECH8 Common Drain Features Low ON-resistance Built-in gate protection resistor 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25

 9.28. Size:316K  onsemi
 ech8667.pdf

Ordering number ENA1778A ECH8667 P-Channel Power MOSFET http //onsemi.com 30V, 5.5A, 39m , Dual ECH8 Features ON-resistance RDS(on)1=30m (typ.) 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltag

 9.29. Size:419K  onsemi
 ech8661.pdf

Ordering number ENA1777A ECH8661 Power MOSFET http //onsemi.com 30V, 7A, 24m , 30V, 5.5A, 39m , Complementary Dual ECH8 Features ON-resistance Nch RDS(on)1=18m (typ.), Pch ON-resistance RDS(on)1=30m (typ.) The ECH8661 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg hig

 9.30. Size:310K  onsemi
 ech8657.pdf

Ordering number ENA1710B ECH8657 N-Channel Power MOSFET http //onsemi.com 35V, 4.5A, 59m , Dual ECH8 Features 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 4.5 A Drain Curre

 9.31. Size:385K  onsemi
 ech8668.pdf

Ordering number ENA1510A ECH8668 Power MOSFET http //onsemi.com 20V, 7.5A, 17m , 20V, 5A, 38m , Complementary Dual ECH8 Features The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting 1.8V drive Halogen free compliance Protection diode in Sp

 9.32. Size:403K  onsemi
 ech8695r.pdf

Ordering number ENA2314A ECH8695R N-Channel Power MOSFET http //onsemi.com 24V, 11A, 9.1m , Dual ECH8 Common Drain Features Low On-resistance Built-in gate protection resistor 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings