2SK906 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK906
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 125 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 32 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
tonⓘ - Tiempo de encendido: 120 nS
Cossⓘ - Capacitancia de salida: 500 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
Encapsulados: TO3P
Búsqueda de reemplazo de 2SK906 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK906 datasheet
..2. Size:203K inchange semiconductor
2sk906.pdf 
isc N-Channel MOSFET Transistor 2SK906 DESCRIPTION Drain Current I =32A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for low voltage. high speed applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Volta
9.1. Size:143K 1
2sk903.pdf
Discontinued product. Discontinued product. Discontinued product.
9.5. Size:183K fuji
2sk903mr.pdf
Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloa
9.8. Size:136K fuji
2sk903-m.pdf
"2SK903M" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK903M" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK903M" Powered by ICminer.com Electronic-Library Service CopyRight 2003
9.9. Size:286K inchange semiconductor
2sk903-mr.pdf
isc N-Channel MOSFET Transistor 2SK903-MR FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 4 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
9.10. Size:199K inchange semiconductor
2sk904.pdf
isc N-Channel MOSFET Transistor 2SK904 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor co
9.11. Size:203K inchange semiconductor
2sk905.pdf
isc N-Channel MOSFET Transistor 2SK905 DESCRIPTION Drain Current I =45A@ T =25 D C Drain Source Voltage- V =50V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for low voltage. high speed applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltag
9.12. Size:202K inchange semiconductor
2sk902.pdf
isc N-Channel MOSFET Transistor 2SK902 DESCRIPTION Drain Current I =30A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 250 V
9.13. Size:285K inchange semiconductor
2sk901.pdf
isc N-Channel MOSFET Transistor 2SK901 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.15 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
9.14. Size:288K inchange semiconductor
2sk900.pdf
isc N-Channel MOSFET Transistor 2SK900 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
Otros transistores... 2SK897-MR, 2SK899, 2SK900, 2SK901, 2SK902, 2SK903, 2SK904, 2SK905, IRF1407, 2SK928, 2SK929, 2SK934, 2SK935, 2SK936, 2SK946, 2SK947, 2SK947-MR
