EMH2407 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: EMH2407
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 1020 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: EMH8

Búsqueda de reemplazo de MOSFET EMH2407

EMH2407 Datasheet (PDF)

..1. Size:306K sanyo
emh2407.pdf

Ordering number : ENA1141B EMH2407SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2407ApplicationsFeatures Low ON-resistance. Best suited for LiB charging and discharging switch. Common-drain type. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source

8.1. Size:307K sanyo
emh2408.pdf

Ordering number : ENA1170 EMH2408SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2408ApplicationsFeatures The EMH2402 incorporates an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,thereby enabling high-density mounting. 1.8V drive. Halogen free cpmpliance.SpecificationsAbsolute Maximum Ra

8.2. Size:346K sanyo
emh2409.pdf

EMH2409Ordering number : ENA1890SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2409ApplicationsFeatures The EMH2409 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute

9.1. Size:57K philips
pemh24 pumh24.pdf

PEMH24; PUMH24NPN/NPN resistor-equipped transistors;R1 = 100 k, R2 = 100 kRev. 04 18 May 2005 Product data sheet1. Product profile1.1 General descriptionNPN/NPN Resistor-Equipped Transistors (RET).Table 1: Product overviewType number Package NPN/PNP PNP/PNPcomplement complementPhilips JEITAPEMH24 SOT666 - PEMD24 PEMB24PUMH24 SOT363 SC-88 PUMD24 PUMB241.2 Feat

9.2. Size:481K sanyo
emh2412.pdf

EMH2412Ordering number : ENA1315SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2412ApplicationsFeatures Low ON-resistance. Best suited for LiB charging and discharging switch. Common-drain type. 2.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditio

9.3. Size:270K sanyo
emh2411r.pdf

EMH2411ROrdering number : ENA1421SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2411RApplicationsFeatures Low ON-resistance. Best suited for LiB charging and discharging switch. Common-drain type. 2.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Condit

9.4. Size:440K onsemi
emh2418r.pdf

Ordering number : ENA2267A EMH2418R N-Channel Power MOSFEThttp://onsemi.com 24V, 9A, 15m, Dual EMH8 Electrical Connection Features N-channel Low On-resistance 2.5V drive8 7 6 5 Common-Drain Type Protection diode in Built-in gate protection resistor Best suited for LiB charging and discharging switch Halogen free compliance Spe

9.5. Size:433K onsemi
emh2417r.pdf

Ordering number : ENA2313A EMH2417R N-Channel Power MOSFET http://onsemi.com 12V, 11A, 10m, Dual EMH8 Common Drain Features Low On-resistance Built-in gate protection resistor 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings

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