EMH2407 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: EMH2407

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.3 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.019 Ohm

Empaquetado / Estuche: EMH8

Búsqueda de reemplazo de MOSFET EMH2407

EMH2407 Datasheet (PDF)

1.1. emh2407.pdf Size:306K _sanyo

Ordering number : ENA1141B EMH2407 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device EMH2407 Applications Features � Low ON-resistance. � Best suited for LiB charging and discharging switch. � Common-drain type. � 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25�C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDS

4.1. emh2408.pdf Size:307K _sanyo

Ordering number : ENA1170 EMH2408 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device EMH2408 Applications Features � The EMH2402 incorporates an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. � 1.8V drive. � Halogen free cpmpliance. Specifications Absolute Maximum Ratings at

4.2. emh2409.pdf Size:346K _sanyo

EMH2409 Ordering number : ENA1890 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device EMH2409 Applications Features � The EMH2409 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting � 4V drive � Halogen free compliance Specifications at Ta=25�C Absolute Maximum Ra

Otros transistores... ECH8667 , ECH8668 , ECH8673 , EFC4618R , EMH1303 , EMH1307 , EMH1405 , EMH2308 , IRFZ46N , EMH2408 , EMH2409 , EMH2412 , EMH2604 , EMH2801 , FW274 , FW282 , FW707 .

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