EMH2412 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EMH2412
Código: LM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 24 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.5 V
Qgⓘ - Carga de la puerta: 6.3 nC
trⓘ - Tiempo de subida: 1020 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm
Paquete / Cubierta: EMH8
Búsqueda de reemplazo de MOSFET EMH2412
EMH2412 Datasheet (PDF)
emh2412.pdf
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emh2411r.pdf
EMH2411ROrdering number : ENA1421SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2411RApplicationsFeatures Low ON-resistance. Best suited for LiB charging and discharging switch. Common-drain type. 2.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Condit
emh2418r.pdf
Ordering number : ENA2267A EMH2418R N-Channel Power MOSFEThttp://onsemi.com 24V, 9A, 15m, Dual EMH8 Electrical Connection Features N-channel Low On-resistance 2.5V drive8 7 6 5 Common-Drain Type Protection diode in Built-in gate protection resistor Best suited for LiB charging and discharging switch Halogen free compliance Spe
emh2417r.pdf
Ordering number : ENA2313A EMH2417R N-Channel Power MOSFET http://onsemi.com 12V, 11A, 10m, Dual EMH8 Common Drain Features Low On-resistance Built-in gate protection resistor 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
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