MCH3475 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MCH3475
   Código: FG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.6 V
   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1.2 V
   Qgⓘ - Carga de la puerta: 2 nC
   trⓘ - Tiempo de subida: 3.6 nS
   Cossⓘ - Capacitancia de salida: 19 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: MCPH3

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MCH3475 Datasheet (PDF)

..1. Size:63K sanyo
mch3475.pdf

Ordering number : ENA1000 MCH3475SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETMCH3475 General-Purpose Switching DeviceApplicationsFeatures Ultrahigh-speed switching. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID

..2. Size:362K onsemi
mch3475.pdf

MCH3475 Power MOSFET www.onsemi.com 30V, 180m, 1.8A, Single N-ChannelFeatures VDSS RDS(on) Max ID Max High Speed Switching 180m@ 10V 4V Drive 30V 1.8A 330m@ 4V Pb-Free and RoHS Compliance Halogen Free Compliance : MCH3475-TL-W Electrical Connection Specifications N-Channel Absolute Maximum Ratings at Ta = 25C Unit Parameter Symbol Valu

8.1. Size:375K 1
mch3476.pdf

MCH3476Ordering number : ENA1952SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3476ApplicationsFeatures 1.8V drive Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 12 VDrain Current (DC) ID

8.2. Size:64K sanyo
mch3477.pdf

Ordering number : ENA1260 MCH3477SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETMCH3477 General-Purpose Switching DeviceApplicationsFeatures Ultrahigh-speed switching. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 12 VDrain Current (DC) I

8.3. Size:323K sanyo
mch3479.pdf

MCH3479Ordering number : ENA1813SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3479ApplicationsFeatures ON-resistance RDS(on)1=49m (typ.) 1.8V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Sou

8.4. Size:291K sanyo
mch3478.pdf

MCH3478Ordering number : ENA1353SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3478ApplicationsFeatures Low ON-resistance. Ultrahigh speed switching. 1.8V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 V

8.5. Size:289K sanyo
mch3474.pdf

MCH3474Ordering number : ENA1397SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3474ApplicationsFeatures Low ON-resistance. Ultrahigh speed switching. 1.8V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS

8.6. Size:352K onsemi
mch3477.pdf

MCH3477 Power MOSFET www.onsemi.com 20V, 38m, 4.5A, Single N-Channel VDSS RDS(on) Max ID MaxFeatures 38 m@4.5V High Speed Switching20V 61 m@2.5V 4.5A 1.8V Drive 99 m@1.8V ESD Diode - Protected Gate Low On-Resistance Pb-Free, Halogen Free and RoHS Compliance Electrical Connection N-Channel Specifications 3Absolute Maximum R

8.7. Size:611K onsemi
mch3476.pdf

MCH3476 Power MOSFET www.onsemi.com 20V, 125m, 2A, Single N-ChannelFeatures VDSS RDS(on) Max ID Max Low On-Resistance 125m@ 4.5V 1.8V Drive 20V 190m@ 2.5V 2A ESD Diode-Protected Gate 310m@ 1.8V Pb-Free, Halogen Free and RoHS Compliance Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25C Unit Parameter Sym

8.8. Size:389K onsemi
mch3479.pdf

MCH3479 Power MOSFET www.onsemi.com 20V, 64m, 3.5A, Single N-Channel Features VDSS RDS(on) Max ID Max Low On-Resistance 64m@ 4.5V 1.8V Drive 20V 95m@ 2.5V 3.5A ESD Diode-Protected Gate 149m@ 1.8V Pb-Free, Halogen Free and RoHS Compliance Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25C Unit Parameter S

8.9. Size:613K onsemi
mch3474.pdf

MCH3474 Power MOSFET 30V, 50m, 4A, Single N-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low www.onsemi.comon resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance VDSS RDS(on) Max ID

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