MCH3477 Todos los transistores

 ..1. Size:64K  sanyo
 mch3477.pdf

Ordering number ENA1260 MCH3477 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH3477 General-Purpose Switching Device Applications Features Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS 12 V Drain Current (DC) I

 ..2. Size:352K  onsemi
 mch3477.pdf

MCH3477 Power MOSFET www.onsemi.com 20V, 38m , 4.5A, Single N-Channel VDSS RDS(on) Max ID Max Features 38 m @4.5V High Speed Switching 20V 61 m @2.5V 4.5A 1.8V Drive 99 m @1.8V ESD Diode - Protected Gate Low On-Resistance Pb-Free, Halogen Free and RoHS Compliance Electrical Connection N-Channel Specifications 3 Absolute Maximum R

 8.1. Size:375K  1
 mch3476.pdf

MCH3476 Ordering number ENA1952 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH3476 Applications Features 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS 12 V Drain Current (DC) ID

 8.2. Size:63K  sanyo
 mch3475.pdf

Ordering number ENA1000 MCH3475 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH3475 General-Purpose Switching Device Applications Features Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID

 8.3. Size:323K  sanyo
 mch3479.pdf

MCH3479 Ordering number ENA1813 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH3479 Applications Features ON-resistance RDS(on)1=49m (typ.) 1.8V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Sou

 8.4. Size:291K  sanyo
 mch3478.pdf

MCH3478 Ordering number ENA1353 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH3478 Applications Features Low ON-resistance. Ultrahigh speed switching. 1.8V drive. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V

 8.5. Size:289K  sanyo
 mch3474.pdf

MCH3474 Ordering number ENA1397 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH3474 Applications Features Low ON-resistance. Ultrahigh speed switching. 1.8V drive. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS

 8.6. Size:611K  onsemi
 mch3476.pdf

MCH3476 Power MOSFET www.onsemi.com 20V, 125m , 2A, Single N-Channel Features VDSS RDS(on) Max ID Max Low On-Resistance 125m @ 4.5V 1.8V Drive 20V 190m @ 2.5V 2A ESD Diode-Protected Gate 310m @ 1.8V Pb-Free, Halogen Free and RoHS Compliance Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25 C Unit Parameter Sym

 8.7. Size:362K  onsemi
 mch3475.pdf

MCH3475 Power MOSFET www.onsemi.com 30V, 180m , 1.8A, Single N-Channel Features VDSS RDS(on) Max ID Max High Speed Switching 180m @ 10V 4V Drive 30V 1.8A 330m @ 4V Pb-Free and RoHS Compliance Halogen Free Compliance MCH3475-TL-W Electrical Connection Specifications N-Channel Absolute Maximum Ratings at Ta = 25 C Unit Parameter Symbol Valu

 8.8. Size:389K  onsemi
 mch3479.pdf

MCH3479 Power MOSFET www.onsemi.com 20V, 64m , 3.5A, Single N-Channel Features VDSS RDS(on) Max ID Max Low On-Resistance 64m @ 4.5V 1.8V Drive 20V 95m @ 2.5V 3.5A ESD Diode-Protected Gate 149m @ 1.8V Pb-Free, Halogen Free and RoHS Compliance Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25 C Unit Parameter S

 8.9. Size:613K  onsemi
 mch3474.pdf

MCH3474 Power MOSFET 30V, 50m , 4A, Single N-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance VDSS RDS(on) Max ID