MCH6436 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MCH6436
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.034 Ohm
   Paquete / Cubierta: MCPH6

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MCH6436 Datasheet (PDF)

..1. Size:496K sanyo
mch6436.pdf

MCH6436Ordering number : ENA1565ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6436ApplicationsFeatures Low ON-resistance. Ultrahigh speed switching. 1.8V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS

..2. Size:392K onsemi
mch6436.pdf

MCH6436 Power MOSFET www.onsemi.com 30V, 34m, 6A, Single N-Channel Features VDSS RDS(on) Max ID Max Low On-Resistance 34m@ 4.5V 1.8V Drive 30V 49m@ 2.5V 6A High Speed Switching 69m@ 1.8V ESD Diode-Protected Gate Pb-Free and RoHS Compliance Electrical Connection N-Channel Specifications Absolute Maximum Ratings at Ta = 25C 1, 2, 5, 6

8.1. Size:362K sanyo
mch6431.pdf

MCH6431Ordering number : ENA1852SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6431ApplicationsFeatures ON-resistance RDS(on)1=42m (typ.) 4V drive Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Sour

8.2. Size:346K sanyo
mch6437.pdf

MCH6437Ordering number : ENA1776SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6437ApplicationsFeatures ON-resistance RDS(on)1=18m (typ.) 1.8V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 12 VDrai

8.3. Size:389K onsemi
mch6437.pdf

MCH6437 Power MOSFET www.onsemi.com 20V, 24m, 7A, Single N-Channel Features VDSS RDS(on) Max ID Max Low On-Resistance 24m@ 4.5V 1.8V Drive 20V 35m@ 2.5V 7A ESD Diode-Protected Gate 65m@ 1.8V Pb-Free and RoHS Compliance Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25C Unit Parameter Symbol Value1, 2,

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